Extremely Large Magnetization and Gilbert Damping Modulation in NiFe/GeBi Bilayers,ACS Applied Electronic Materials

当前位置： X-MOL 学术 › ACS Appl. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Extremely Large Magnetization and Gilbert Damping Modulation in NiFe/GeBi Bilayers
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-01-16 , DOI: 10.1021/acsaelm.9b00735
Dainan Zhang ₁ , Mingming Li ₁ , Lichuan Jin ₁ , Chenguang Li ₁ , Yiheng Rao ₁ , Xiaoli Tang ₁ , Huaiwu Zhang ₁

Affiliation

We have fabricated NiFe/GeBi heterostructures and investigated the spin pumping effect. The GeBi semiconductor film had a remarkable impact on the magnetization of the GeBi/NiFe structure, which may have been caused by the strong spin–orbit coupling of the Bi ions that can affect the torque orientation of NiFe. When a nanometer thick Cu film was inserted in the film structure (GeBi/Cu/NiFe), the coercive force of the new film decreased, and the saturation magnetization increased, because Cu isolated the coupling between the GeBi and NiFe layers. Ferromagnetic resonance (FMR) measurements showed that the GeBi/Cu/NiFe heterostructure had a reduced Gilbert damping and resonance field H_FMR, when compared with those of the GeBi/NiFe thin film. This work indicated that the GeBi could be used for adjusting both the magnetization and Gilbert damping constant dramatically.

中文翻译：

NiFe / GeBi双层中的超大磁化强度和吉尔伯特阻尼调制

我们已经制作了NiFe / GeBi异质结构并研究了自旋泵浦效应。GeBi半导体膜对GeBi / NiFe结构的磁化强度产生了显着影响，这可能是由于Bi离子的强自旋轨道耦合引起的，这会影响NiFe的扭矩取向。当在膜结构（GeBi / Cu / NiFe）中插入纳米厚的Cu膜时，由于Cu隔离了GeBi和NiFe层之间的耦合，因此新膜的矫顽力降低，饱和磁化强度增加。铁磁共振（FMR）测量表明，GeBi / Cu / NiFe异质结构具有降低的吉尔伯特阻尼和共振场H _FMR与GeBi / NiFe薄膜相比。这项工作表明，GeBi可用于显着调节磁化强度和吉尔伯特阻尼常数。

更新日期：2020-01-17

点击分享查看原文

点击收藏

公开下载

阅读更多本刊最新论文本刊介绍/投稿指南11