Complementary resistive switching (CRS) is a suitable method to solve the sneak path problem in passive crossbar arrays. In this work, we fabricated very simple single layered memory devices consisting of indium tin oxide (ITO)/polymer/ITO structures using a conductive polymer, polyaniline (PAni), showing forming-free CRS behavior. The switching mechanism is discussed by the simultaneous protonation/deprotonation process that is a new expression of CRS behavior in memory devices. This mechanism originates from changes in the resistance states between the two different forms of PAni and is influenced only by applying the electric field. For this purpose, PAni nanostructures with different concentrations of hydrochloric acid (HCl) were synthesized, which the structural and morphological characteristics of the specimens confirmed their formation. The electrical conductivity parameter was also discussed, and according to the data obtained from the analyses, increasing the acid concentration reduces the conductivity of PAni nanostructures as a resistive device.

互补电阻切换（CRS）是解决无源交叉开关阵列中潜行路径问题的合适方法。在这项工作中，我们使用导电聚合物聚苯胺（PAni）制造了非常简单的单层存储器件，该器件由氧化铟锡（ITO）/聚合物/ ITO结构组成，显示出无成型的CRS行为。通过同时质子化/去质子化过程来讨论切换机制，这是存储设备中CRS行为的新表达。该机制源自两种不同形式的PAni之间的电阻状态变化，并且仅受施加电场的影响。为此，合成了具有不同浓度盐酸（HCl）的PAni纳米结构，样品的结构和形态特征证实了它们的形成。