Abstract Efficient, safe and cost-effective synthesis of CdTe from elements is rather challenging in silica sealed ampoules due to the high vapor pressure of Cd. In this article, we report on the integrated synthesis and crystal growth of high-purity CdTe using the high pressure Bridgman (HPB) technique that is scalable to large volumes. The process lends itself for cost competitive industrial production of polycrystalline feedstock material for photovoltaics, sensors and electro-optic applications. Cadmium telluride (CdTe) crystals exceeding 1 kg in size were synthesized from elemental Cd and Te sources with purity comparable to state-of-the-art gamma ray detector crystals. In addition, synthesis of highly-doped CdTe feedstock for thin film photovoltaics applications demonstrating effective incorporation of group V (As, Sb) dopants was achieved at growth speeds of ~500 mm/hr. The technique may be applicable to produce other II-VI compounds with volatile components.

中文翻译：

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使用高压布里奇曼技术的 CdTe 合成和晶体生长

摘要 由于 Cd 的高蒸气压，在硅胶密封安瓿中从元素高效、安全和经济地合成 CdTe 是相当具有挑战性的。在本文中，我们报告了使用可大规模扩展的高压布里奇曼 (HPB) 技术对高纯度 CdTe 的集成合成和晶体生长。该工艺适用于具有成本竞争力的多晶原料工业生产，用于光伏、传感器和电光应用。尺寸超过 1 kg 的碲化镉 (CdTe) 晶体由元素 Cd 和 Te 源合成，其纯度与最先进的伽马射线探测器晶体相当。此外，用于薄膜光伏应用的高掺杂 CdTe 原料的合成证明了 V 族（As，Sb) 掺杂剂的生长速度约为 500 毫米/小时。该技术可用于生产其他具有挥发性成分的 II-VI 化合物。