Abstract Perovskite light emitting diodes (PeLEDs) have attracted massive research interest in recent years. In order to obtain better luminescent properties, most attention is paid to the emitting layer perovskite materials. Actually, the other layers such as the transport layers should also be optimized. We proposed the optimization of hole transport layer NiO materials by magnetron sputtering. Effects of RF power, sputtering pressure and sputtering argon-oxygen ratio on surface morphology and electrical properties of NiO film were studied. Sputtering power, pressure and Ar/O2 were set at 90 W, 25 mTorr and 10/40 over the past parameters to optimize the NiO film in our previous ZnO/CsPbBr3/NiO structured all inorganic perovskite LED. SEM, PL, XRD measurements were conducted to characterize the CsPbBr3 having good morphologies, light emitting characteristics, and crystal quality. PeLEDs with and without the optimized hole transport layer NiO were compared. The EL results show that the optimized PeLED has much better electroluminescence characteristics than the one without optimization. Our work demonstrated a possible way to improve the luminescence properties of the PeLED.

中文翻译：

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用于全无机钙钛矿发光二极管的空穴传输层 NiO 的制备和优化

摘要 近年来，钙钛矿发光二极管（PeLEDs）引起了广泛的研究兴趣。为了获得更好的发光性能，发光层钙钛矿材料备受关注。实际上，其他层如传输层也应该优化。我们提出了通过磁控溅射优化空穴传输层 NiO 材料。研究了射频功率、溅射压力和溅射氩氧比对NiO薄膜表面形貌和电学性能的影响。溅射功率、压力和 Ar/O2 设置为 90 W、25 mTorr 和 10/40 超过过去的参数，以优化我们之前的 ZnO/CsPbBr3/NiO 结构的全无机钙钛矿 LED 中的 NiO 薄膜。进行 SEM、PL、XRD 测量以表征具有良好形貌的 CsPbBr3，发光特性和晶体质量。比较了带有和不带有优化空穴传输层 NiO 的 PeLED。EL 结果表明，优化后的 PeLED 比未优化的 PeLED 具有更好的电致发光特性。我们的工作展示了一种改善 PeLED 发光特性的可能方法。