The strategy of a reliable transition temperature control of vanadium dioxide (VO₂) is reported. Rectangular VO₂ nanobeams were synthesized by a thermal chemical vapor deposition (TCVD) system. The metal-insulator transition (MIT) temperature increases to above 380 K when the TiO₂ ratio of the source is 5 at.%, although the Ti source is not physically doped into VO₂ nanobeams. The XPS spectra of the V 2p orbital reveal the excessive oxidation of V after the TCVD processes with a higher TiO₂ ratio, indicating that the TiO₂ precursor is important in the O-doping of the surface VO bonds when forming volatile Ti-O gas species. Thus, TiO₂ reactants can be used as a VO₂ surface chemical modifier to manipulate the MIT transition temperature and maintain a homogenous VO₂ phase, which is useful for a Mott device application with a record on/off switching ratio > 10⁴ and Mott transition temperature > 380 K.

报道了可靠地控制二氧化钒（VO ₂）的转变温度的策略。通过热化学气相沉积（TCVD）系统合成矩形VO ₂纳米束。当源的TiO ₂比例为5 at。％时，金属-绝缘体转变（MIT）温度增加到380 K以上，尽管Ti源并未物理掺杂到VO ₂纳米束中。V 2p轨道的XPS光谱显示，在具有较高TiO ₂比的TCVD工艺之后，V的过度氧化，表明TiO ₂前体在形成挥发性Ti-O时在表面V O键的O掺杂中很重要。气体种类。因此，TiO ₂反应物可用作VO ₂表面化学改性剂，以控制MIT转变温度并保持均匀的VO ₂相，这对于开/关切换比> 10 ⁴且Mott转变温度> 380的记录的Mott装置应用非常有用K.