Abstract In this study, water stabilized plasma spraying (WSP) was used to prepare CaZrO3 coatings, whereas CaZrO3 bulk samples were fired using spark plasma sintering (SPS). The spraying feedstock was prepared from fine CaZrO3 powder by agglomeration (spray drying) and sintering. The initial fine CaZrO3 powder was used for SPS. In case of plasma sprayed materials, the influence of spraying process on the coating structure was studied. Differences in the structure of plasma sprayed thick coatings and SPS compacts were characterized using microscopy, density and porosity measurements. The deposits were striped-out from the substrate, ground and polished in order to produce samples in a shape of planparallel plates with a smooth surface. These samples – in principle monoblock capacitors – were subjected to low voltage alternating electric field with a frequency range from 1 kHz to 1 MHz and their capacitance and loss factor were measured. Relative permittivity was calculated afterwards from the measured capacitance. Dependences of permittivity and losses were also studied for varying temperatures in a range 20–150 °C. Volume resistivity was measured in direct electric field at a room temperature. Influence of the SPS process and subsequent annealing on the microstructure and dielectric properties was studied as well. Decrease of porosity and rearrangement of grains after proper annealing brought improvements in the dielectric characteristics.

中文翻译：

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等离子喷涂和放电等离子烧结法制备的 CaZrO3 涂层的介电性能

摘要 在本研究中，使用水稳定等离子喷涂 (WSP) 制备 CaZrO3 涂层，而使用放电等离子烧结 (SPS) 烧制 CaZrO3 块状样品。喷雾原料由细小的 CaZrO3 粉末通过附聚（喷雾干燥）和烧结制备。最初的精细 CaZrO3 粉末用于 SPS。在等离子喷涂材料的情况下，研究了喷涂工艺对涂层结构的影响。等离子喷涂厚涂层和 SPS 压块的结构差异使用显微镜、密度和孔隙率测量进行表征。将沉积物从基材上剥离、研磨和抛光以生产具有光滑表面的平面平行板形状的样品。这些样品（原则上是单体电容器）经受频率范围为 1 kHz 至 1 MHz 的低压交变电场，并测量了它们的电容和损耗因数。之后根据测量的电容计算相对介电常数。还研究了介电常数和损耗的相关性，适用于 20–150 °C 范围内的不同温度。在室温下在直接电场中测量体积电阻率。还研究了 SPS 工艺和随后的退火对微观结构和介电性能的影响。适当退火后孔隙率的降低和晶粒的重新排列带来了介电特性的改善。之后根据测量的电容计算相对介电常数。还研究了介电常数和损耗的相关性，适用于 20–150 °C 范围内的不同温度。在室温下在直接电场中测量体积电阻率。还研究了 SPS 工艺和随后的退火对微观结构和介电性能的影响。适当退火后孔隙率的降低和晶粒的重新排列带来了介电特性的改善。之后根据测量的电容计算相对介电常数。还研究了介电常数和损耗的相关性，适用于 20–150 °C 范围内的不同温度。在室温下在直接电场中测量体积电阻率。还研究了 SPS 工艺和随后的退火对微观结构和介电性能的影响。适当退火后孔隙率的降低和晶粒的重新排列带来了介电特性的改善。