Pressure sensors have been widely employed and generally consist of complex circuits or multilayered matrix structures based on piezoresistivity, capacitance, and electricity. Herein, we propose a piezoelectric pressure sensor constituted by flexible ZnO nanorod (NR) arrays and a 2D indium selenide (InSe)-based field-effect transistor (FET). The ZnO NR arrays transform stress into piezoelectric voltage, which contributes to the gate potential. The piezoelectric voltage is effectively amplified by the InSe-based FET, which has high field-effect mobility and electrical stability. The loading pressure on ZnO is analyzed by measuring the current variation of the InSe-based FET. The pressure sensor can sense a minimum load of 0.1 g corresponding to a potential of 0.2 mV. Here, we present a new strategy to construct a piezoelectric pressure sensor by integration of pressure-sensitive ZnO NR arrays with potential-sensitive InSe-based FET, the integration of flexible sensor parts and rigid micro amplifier parts benefit the realization of wearable functions with the stable signal output. Moreover, this facile fabrication would promote promising applications in flexible electronics.

压力传感器已被广泛采用，并且通常由基于压阻，电容和电的复杂电路或多层矩阵结构组成。本文中，我们提出了一种压电压力传感器，该传感器由柔性ZnO纳米棒（NR）阵列和基于2D硒化铟（InSe）的场效应晶体管（FET）构成。ZnO NR阵列将应力转换为压电电压，这有助于栅极电势。压电电压通过基于InSe的FET有效地放大，具有高的场效应迁移率和电稳定性。通过测量基于InSe的FET的电流变化来分析ZnO上的加载压力。压力传感器可以感应到0.1 g的最小负载，对应于0.2 mV的电势。这里，我们提出了一种新的策略，即通过将压敏ZnO NR阵列与电位敏感的基于InSe的FET集成来构建压电压力传感器，灵活的传感器部件和刚性微放大器部件的集成有利于实现具有稳定信号的可穿戴功能输出。而且，这种容易的制造将促进在柔性电子中有希望的应用。