Tuning the Electronic Properties of Atomically Precise Graphene Nanoribbons by Bottom‐Up Fabrication,ChemNanoMat

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Tuning the Electronic Properties of Atomically Precise Graphene Nanoribbons by Bottom‐Up Fabrication
ChemNanoMat ( IF 2.6 ) Pub Date : 2020-03-18 , DOI: 10.1002/cnma.201900706
Zhenliang Hao ₁ , Hui Zhang ₁ , Zilin Ruan ₁ , Cuixia Yan ₁ , Jianchen Lu ₁ , Jinming Cai ₁

Affiliation

Graphene, a monolayer of graphite, is predicted to be one of the most promising materials to replace silicon in future electronic instruments. Despite its extraordinary electronic and thermal properties, the lack of an electronic band gap severely hampers its potential for applications in digital electronics. In contrast, narrow stripes of graphene, so called graphene nanoribbons (GNRs) are semiconductors, due to the quantum confinement with the tunable band gap by variation with the width and edge structure that is armchair, zigzag or the combination of both edges. This review covers the recent progress in bottom‐up approaches based on the surface‐catalyzed assembly of molecular precursors and tuning of the electronic properties of GNRs by fabricating atomically precise GNRs of different widths, various edge structures as well as doped structures. In addition, this review also indicates the challenges ahead and possible promising ways to finely tune the electronic structures of GNRs through slight modifications of the molecular configurations of the precursors.

中文翻译：

通过自下而上的制造来调整原子精确石墨烯纳米带的电子性能

石墨烯是石墨的单层，预计将成为未来电子仪器中替代硅的最有前途的材料之一。尽管具有非凡的电子和热学性能，但缺乏电子带隙严重阻碍了其在数字电子领域的应用潜力。相比之下，石墨烯的窄条（所谓的石墨烯纳米带（GNR））是半导体，这是由于通过限制宽度和边缘结构（例如扶手椅，锯齿形或两个边缘的组合）的变化而具有可调带隙的量子限制。这篇综述涵盖了自下而上方法的最新进展，该方法基于分子前体的表面催化组装以及通过制造不同宽度，各种边缘结构以及掺杂结构的原子精确GNR来调节GNR的电子性能。

更新日期：2020-03-18

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