Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si,ACS Photonics

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Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si
ACS Photonics ( IF 6.5 ) Pub Date : 2020-01-17 , DOI: 10.1021/acsphotonics.9b01709
Baile Chen _{1,

2} , Yating Wan ₁ , Zhiyang Xie ₂ , Jian Huang ₂ , Ningtao Zhang ₂ , Chen Shang ₃ , Justin Norman ₃ , Qiang Li ₄ , Yeyu Tong _{1,

5} , Kei May Lau ₄ , Arthur C. Gossard _{1,

3,

6} , John E. Bowers _{1,

3,

6}

Affiliation

Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (−5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.

中文翻译：

在Si上整体生长的低暗电流高增益InAs量子点雪崩光电二极管

Si上以光通信波段工作的雪崩光电二极管（APD）对于基于Si的收发器应用至关重要。在本文中，我们报告了第一块在Si上整体生长的O带InAs量子点（QD）波导APD，单位增益下的暗电流低至0.1 nA，单位增益下的响应度为0.234 A / W，在1.310μm时（- 5 V）。在线性增益模式下，APD的最大增益为198，并显示高达8 Gbit / s的清晰眼图。这些基于QD的APD享有与QD激光器共享相同的外延层和加工流程的优势，这有可能促进与Si平台上的激光源集成。

更新日期：2020-01-17

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