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Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si
ACS Photonics ( IF 6.5 ) Pub Date : 2020-01-17 , DOI: 10.1021/acsphotonics.9b01709
Baile Chen 1, 2 , Yating Wan 1 , Zhiyang Xie 2 , Jian Huang 2 , Ningtao Zhang 2 , Chen Shang 3 , Justin Norman 3 , Qiang Li 4 , Yeyu Tong 1, 5 , Kei May Lau 4 , Arthur C. Gossard 1, 3, 6 , John E. Bowers 1, 3, 6
Affiliation  

Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (−5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.

中文翻译:

在Si上整体生长的低暗电流高增益InAs量子点雪崩光电二极管

Si上以光通信波段工作的雪崩光电二极管(APD)对于基于Si的收发器应用至关重要。在本文中,我们报告了第一块在Si上整体生长的O带InAs量子点(QD)波导APD,单位增益下的暗电流低至0.1 nA,单位增益下的响应度为0.234 A / W,在1.310μm时(- 5 V)。在线性增益模式下,APD的最大增益为198,并显示高达8 Gbit / s的清晰眼图。这些基于QD的APD享有与QD激光器共享相同的外延层和加工流程的优势,这有可能促进与Si平台上的激光源集成。
更新日期:2020-01-17
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