Growth of few-layer graphene on Cu foil by regulating the pressure of reaction gases,CrystEngComm

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Growth of few-layer graphene on Cu foil by regulating the pressure of reaction gases
CrystEngComm ( IF 2.6 ) Pub Date : 2020/01/08 , DOI: 10.1039/c9ce01751h
Weiwei Hou _{1,

2,

3,

4} , Jianyu Wang _{1,

2,

3,

4} , Zhendong Wang _{1,

2,

3,

4} , Kai Cao _{1,

2,

3,

4} , Liyun Qin _{1,

2,

3,

4} , Li Wang _{1,

2,

3,

4}

Affiliation

A method to grow few-layer graphene in the form of an “inverted pagoda” is proposed by controlling the pressure and the flow rate in a circulating chemical vapor deposition system. Such single-crystal few-layer graphene consists of one- to eight-layer graphene areas exhibiting layer growth characteristics. Moreover, each layer within this kind of few-layer graphene is in Bernal stacking. In this work, with increasing growth pressure, the self-limiting effect of graphene was successfully overcome, and the growth of graphene in the vertical direction was achieved. By controlling the ratio of H₂/CH₄, the morphology and the number of layers of the multilayer graphene under the single-layer graphene were modulated.

中文翻译：

通过调节反应气体的压力在铜箔上生长几层石墨烯

通过控制循环化学气相沉积系统中的压力和流速，提出了一种以“倒塔”形式生长几层石墨烯的方法。这种单晶的少层石墨烯由具有层生长特性的一层至八层石墨烯区域组成。而且，这种几层石墨烯内的每一层都在伯纳尔堆叠中。在这项工作中，随着生长压力的增加，成功地克服了石墨烯的自限作用，并实现了石墨烯在垂直方向上的生长。通过控制H ₂ / CH ₄的比例，可以调节单层石墨烯下的多层石墨烯的形态和层数。

更新日期：2020-02-13

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