Charge-carrier mobility is an important and crucial performance criterion for organic semiconductors and nanocarbon materials such as carbon nanotubes (CNTs). Although high conductivity has been achieved in highly doped organic semiconductors and CNT networks, reliable measurements of charge-carrier mobility in such disordered materials remain a challenge. Here, we developed and extended a new mobility measurement method, referred to as photoinduced charge transfer, from conducting polymers to nanocarbon materials. We apply this method to examine the carrier mobility of graphene, where the carrier mobility can be extracted using a Hall-effect measurement. By comparing the mobility values obtained using these two methods, we can understand the potential errors in the mobility values extracted using photoinduced dedoping reactions. We further extend this approach to disordered CNT networks and determine the relationship among CNT structure, defects, and carrier mobility.

收费-载流子迁移率是有机半导体和纳米碳材料（例如碳纳米管（CNT））的重要且至关重要的性能标准。尽管在高度掺杂的有机半导体和CNT网络中已经实现了高电导率，但是在这种无序的材料中可靠地测量载流子迁移率仍然是一个挑战。在这里，我们开发并扩展了一种新的迁移率测量方法，称为光致电荷转移，从导电聚合物到纳米碳材料。我们应用这种方法来检查石墨烯的载流子迁移率，其中可以使用霍尔效应测量来提取载流子迁移率。通过比较使用这两种方法获得的迁移率值，我们可以了解使用光诱导去掺杂反应提取的迁移率值中的潜在误差。