This paper investigates damage generation and evolution nearby silicon surface bombarded by energetic carbon ions by using molecular dynamics simulations. We experimentally measured elementary composition in defect regions based on energy dispersive spectrometer analysis. Using molecular dynamics simulations, point defects generation and evolution in monocrystalline silicon were illustrated. The percentage of carbon in defect regions is significantly more than that in non-irradiated regions of monocrystalline silicon. Point defects rapidly generate at the beginning of collision cascades between projective carbon ions and silicon atoms. The radial straggling and penetration along the depth direction are respectively dominant when projective ions with different kinetic energies implant into silicon target. These results can be used to better understand the interaction between projective energetic ions and target.

本文利用分子动力学模拟研究了高能碳离子轰击的硅表面附近的损伤产生和演化。我们基于能量色散谱仪分析实验测量了缺陷区域中的元素组成。使用分子动力学模拟，说明了单晶硅中点缺陷的产生和演化。缺陷区域中的碳百分比明显高于单晶硅非辐照区域中的碳百分比。在投射碳离子和硅原子之间的碰撞级联开始时，会迅速生成点缺陷。当具有不同动能的投射离子注入到硅靶中时，沿深度方向的径向散布和穿透分别占主导地位。