Composite active elements (AEs) of thin-disk geometry with an anti-amplified-spontaneous-emission (ASE) cap were created for the first time from dissimilar materials (Yb:YAG and sapphire crystals) using the surface-activated direct bonding method based on etching the surfaces with an Ar ion beam and then bringing them into optical contact. Using a sapphire anti-ASE cap allows the thermal lens optical power and the ${{\rm M}^2}$ factor to be reduced significantly compared with the same AE with a YAG anti-ASE cap, and ${{\rm M}^2}$ compared to standard Yb:YAG disks without an anti-ASE cap. Lasing with 320 W average power and ${\sim}{50}\% $ slope efficiency was obtained.

中文翻译：

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Yb：YAG /蓝宝石复合薄盘有源元件，用于高能高平均功率激光器

使用基于表面活化的直接键合方法，首次从异种材料（Yb：YAG和蓝宝石晶体）中创建具有反放大自发（ASE）帽的薄盘几何形状的复合有源元件（AE）用Ar离子束蚀刻表面，然后使其光学接触。使用蓝宝石抗ASE帽允许的热透镜的光功率和$ {{\ RM中号} ^ 2} $因子显著与用YAG抗ASE帽相同的AE相比，可以降低，和$ {{\ RM M} ^ 2} $与没有防ASE帽的标准Yb：YAG磁盘相比。获得平均功率为320 W和$ {\ sim} {50} \％$的斜率效率。