A porous-Al_0.47GaN/n-Al_0.47GaN stack structure with a large refractive index contrast has been fabricated through a homoepitaxial growth process on a Si-doped n⁺-Al_0.47GaN/n-Al_0.47GaN stack structure with a simple electrochemical wet etching process. A 20-pairs porous-Al_0.47GaN distributed Bragg reflector structure (DBR) with a high aluminum content was fabricated at the deep-ultraviolet wavelength region of light emitting diodes. Low compressive strain and high reflectance has been observed in a porous-AlGaN/n-AlGaN DBR structure with 93% reflectivity at 276 nm. The high reflectance spectrum was measured at the 265 to 287 nm wavelength region in the porous AlGaN DBR structure. The absorption wavelength of the AlGaN layer was observed at about 250 nm, which is shorter than the high reflectance wavelength region of the porous DBR. Light extraction efficiency of the deep-UV optoelectronic devices can be improved by integrating the embedded porous AlGaN reflectors during the epitaxial growth process.

中文翻译：

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适用于深紫外发光二极管和激光二极管的深紫外多孔AlGaN分布式布拉格反射器

通过同质外延生长工艺，以简单的方式在掺Si的n ⁺ -Al _0.47 GaN / n-Al _0.47 GaN叠层结构上，通过同质外延生长工艺制备了折射率对比度大的多孔Al _0.47 GaN / n-Al _0.47 GaN叠层结构。电化学湿蚀刻工艺。20对多孔铝_0.47在发光二极管的深紫外波长区域制造了具有高铝含量的GaN分布式布拉格反射器结构（DBR）。在多孔AlGaN / n-AlGaN DBR结构中，在276 nm处具有93％的反射率，观察到低压缩应变和高反射率。在多孔AlGaN DBR结构中的265至287 nm波长区域测量了高反射光谱。在约250nm处观察到AlGaN层的吸收波长，该波长比多孔DBR的高反射率波长区域短。通过在外延生长过程中集成嵌入的多孔AlGaN反射器，可以提高深紫外光电器件的光提取效率。