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Fermi Level Pinning Induced by Doping in Air Stable n-Type Organic Semiconductor
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-01-06 , DOI: 10.1021/acsaelm.9b00742 Shikha Sharma , Samrat Ghosh 1 , Tanweer Ahmed , Suman Ray , Saurav Islam , Ulrike Salzner 2 , Arindam Ghosh , Shu Seki 1 , Satish Patil
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-01-06 , DOI: 10.1021/acsaelm.9b00742 Shikha Sharma , Samrat Ghosh 1 , Tanweer Ahmed , Suman Ray , Saurav Islam , Ulrike Salzner 2 , Arindam Ghosh , Shu Seki 1 , Satish Patil
Affiliation
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Doping of organic semiconductors enhances the performance of optoelectronic devices. Although p-type doping is well studied and successfully deployed in optoelectronic devices, air stable n-type doping was still elusive. We succeeded with n-type doping of organic semiconductors using molecular dopant N-DMBI under ambient conditions. Strikingly, n-type doping accounts for a gigantic increase of the photoconductivity of doped thin films. Electrical and optical properties of the n-doped molecular semiconductor were investigated by temperature dependent conductivity, electron paramagnetic resonance (EPR), and flash-photolysis time-resolved microwave conductivity (FP-TRMC) measurements. A significant reduction and saturation in activation energy with increasing doping level clearly suggests the formation of an impurity band and enhancement in carrier density. Computational studies reveal the formation of a charge transfer complex mediated by hydrogen abstraction as the rate-determining step for the doping mechanism. The colossal enhancement of photoconductivity induced by n-doping is a significant step toward optoelectronic devices made of molecular semiconductors.
中文翻译：
空气稳定的n型有机半导体中掺杂引起的费米能级钉扎
掺杂有机半导体可增强光电器件的性能。尽管对p型掺杂进行了充分的研究并成功地将其部署在光电器件中，但空气稳定的n型掺杂仍然难以捉摸。我们在环境条件下使用分子掺杂剂N-DMBI成功地对有机半导体进行了n型掺杂。引人注目的是，n型掺杂导致掺杂薄膜的光电导性大大增加。通过温度依赖性电导率，电子顺磁共振（EPR）和快速光解时间分辨微波电导率（FP-TRMC）测量研究了n掺杂分子半导体的电学和光学性质。随着掺杂水平的增加，活化能的显着降低和饱和清楚地表明了杂质带的形成和载流子密度的提高。计算研究表明，由氢提取介导的电荷转移络合物的形成是掺杂机理的速率确定步骤。由n掺杂引起的光电导性的全面增强是迈向由分子半导体制成的光电器件的重要一步。
更新日期：2020-01-07
中文翻译：
空气稳定的n型有机半导体中掺杂引起的费米能级钉扎
掺杂有机半导体可增强光电器件的性能。尽管对p型掺杂进行了充分的研究并成功地将其部署在光电器件中，但空气稳定的n型掺杂仍然难以捉摸。我们在环境条件下使用分子掺杂剂N-DMBI成功地对有机半导体进行了n型掺杂。引人注目的是，n型掺杂导致掺杂薄膜的光电导性大大增加。通过温度依赖性电导率，电子顺磁共振（EPR）和快速光解时间分辨微波电导率（FP-TRMC）测量研究了n掺杂分子半导体的电学和光学性质。随着掺杂水平的增加，活化能的显着降低和饱和清楚地表明了杂质带的形成和载流子密度的提高。计算研究表明，由氢提取介导的电荷转移络合物的形成是掺杂机理的速率确定步骤。由n掺杂引起的光电导性的全面增强是迈向由分子半导体制成的光电器件的重要一步。
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