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Interfacial Charge Dynamics in Metal-Oxide–Semiconductor Structures: The Effect of Deep Traps and Acceptor Levels inGaN
Physical Review Applied ( IF 4.532 ) Pub Date : 2020-01-07 , DOI: 10.1103/physrevapplied.13.014007
Y. Sharabani, Andrea Palmieri, Alexandros Kyrtsos, Masahiko Matsubara, and Enrico Bellotti

Using numerical simulations, we investigate the effects of deep traps and deep acceptor levels in magnesium-doped GaN on interface charges in the semiconductor-oxide interface. Specifically, in this work we address two open issues observed in experimental studies on GaN trench metal-oxide-semiconductor field-effect transistors. (i) We investigate the observed clockwise hysteresis in the transfer characteristics and elucidate the underlying physical mechanism causing it. By employing appropriate models for substitutional carbon at nitrogen sites (CN) and nitrogen vacancies (VN), we calculate the hysteresis dependence on the trap concentrations and the measurement sweep duration Ts. We show that CN acceptor traps in p-GaN are likely responsible for this phenomenon and the largest hysteresis is predicted for a sweep duration of Ts≈30s. (ii) We also address the apparent inconsistency between the experimental and theoretically predicted magnesium-ionization levels and the variations of the measured transfer characteristics, specifically the threshold voltage. We show that the bands bending in the channel area creates a layer in which magnesium is completely ionized. As a result, the magnesium partial ionization does not have an effect and, while the threshold voltage decreases, nor does the breakdown voltage, as observed experimentally. The measured threshold voltage, which is lower than the theoretically predicted value, is caused by fixed and trapped charges at the interface, in agreement with values reported in the literature.
更新日期:2020-01-07

 

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