Abstract The effect due to doping by B, Si, N atoms on the magneto-transport properties of graphene is investigated using the generalized tight-binding model in conjunction with the Kubo formula. The crucial electronic and transport properties are greatly diversified by different types of dopant and doping concentrations. The effect of these guest atoms includes opening a band gap, thereby giving rise to rich Landau level energy spectra and consequently a unique quantum-Hall conductivity. The Fermi-energy dependent quantum-Hall effect appears as a step structure having both integer and half-integer plateaus. Doping with Si leads to an occurrence of a zero quantum-Hall conductivity, unlike the plateau sequence for pristine graphene. The predicted dopant- and concentration-enriched quantum-Hall effect for doped graphene can provide useful information for magneto-transport measurements, possible technological and even metrology applications.

中文翻译：

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B-、Si-和N-掺杂石墨烯的磁传输特性

摘要 利用广义紧束缚模型结合Kubo公式研究了B、Si、N原子掺杂对石墨烯磁输运特性的影响。关键的电子和传输特性因不同类型的掺杂剂和掺杂浓度而异。这些客体原子的作用包括打开带隙，从而产生丰富的朗道能谱，从而产生独特的量子霍尔电导率。费米能量相关的量子霍尔效应表现为具有整数和半整数平台的阶梯结构。与原始石墨烯的平台序列不同，掺杂 Si 导致出现零量子霍尔电导率。