In this study, near-infrared (NIR) x-polarized (P-state) light is created from the transmission ray of monoclinic multilayer GaTe near the band edge. The P-state transmittance photons are produced via the transmission light of a ribbonlike multilayer GaTe with a plurality of nanowire grids being parallel and constructed along the y direction (b axis) from 1.56 to 1.62 eV. At 300 K, a P-state excitonic emission at 1.652 eV can be clearly detected in polarized microphotoluminescence (μPL) measurement. The free-exciton extinction energy and recombination lifetime of the band-edge exciton are evaluated and determined to be ΔE = 32 ± 4 meV and τ ≈ 0.032 ns, respectively, for the multilayer GaTe. Polarized microthermoreflectance (μTR) measurement also verifies that the x-polarized transition is allowed while y-polarized (S-state) transition is forbidden in the multilayer GaTe. An asymmetric p-to-p transition along the x polarization is thus inferred to comprise the band edge of multilayer GaTe to form in-plane optical anisotropy.

中文翻译：

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多层GaTe中观察到的纳米线网格极化和极化激子发射。

在这项研究中，近红外（NIR）x偏振（P态）光是由单斜多层GaTe在带边缘附近的透射射线产生的。P状态透射光子是通过带状多层GaTe的透射光产生的，该带状多层GaTe具有平行的并沿着y方向（b轴）从1.56至1.62eV构造的多个纳米线网格。在300 K下，通过偏振微光致发光（μPL）测量可以清楚地检测到1.652 eV的P态激子发射。对于多层GaTe，评估并确定了带边激子的自由激子消光能和复合寿命，分别为ΔE= 32±4 meV和τ≈0.032 ns。极化微热反射率（μTR）测量还验证了多层GaTe中是否允许x极化跃迁，而y极化（S状态）跃迁是被禁止的。因此，可以推断出沿x极化的不对称p到p跃迁包含多层GaTe的能带边缘，从而形成面内光学各向异性。