Abstract A new strategy for preparation of Cu2ZnSn(SxSe1−x)4 (CZTSSe) thin film solar cells by a two-step sulfurization of Cu-Zn-Sn-Se precursors is introduced. The growth evolution of the CZTSSe films has been characterized compositionally and structurally and the growth mechanism has been revealed. A single-phase CZTSSe film without any secondary phase was observed with a solar cell efficiency of 8.55%. A sulfur rich CZTSSe layer was obtained at grain boundaries which is proposed to be beneficial by forming a hole barrier at grain boundary to reduce the recombination. This solar cell is further characterized using photoluminescence (PL) and capacitance-voltage (C-V) and drive-level capacitance profiling (DLCP) technology.

中文翻译：

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两步硫化法制备Cu2ZnSn(SxSe1−x)4太阳能电池

摘要 介绍了一种通过两步硫化Cu-Zn-Sn-Se 前驱体制备Cu2ZnSn(SxSe1-x)4 (CZTSSe) 薄膜太阳能电池的新策略。CZTSSe 薄膜的生长演变已经在成分和结构上进行了表征，并且已经揭示了生长机制。观察到没有任何第二相的单相 CZTSSe 膜，太阳能电池效率为 8.55%。在晶界处获得了富含硫的 CZTSSe 层，这被认为有利于在晶界形成空穴势垒以减少复合。该太阳能电池使用光致发光 (PL) 和电容电压 (CV) 以及驱动级电容分析 (DLCP) 技术进一步表征。