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A new theoretical approach for the performance simulation of multijunction solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-01-07 , DOI: 10.1002/pip.3225 Gianluca Timò 1, 2 , Alessio Martinelli 1 , Lucio Claudio Andreani 2
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-01-07 , DOI: 10.1002/pip.3225 Gianluca Timò 1, 2 , Alessio Martinelli 1 , Lucio Claudio Andreani 2
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A new theoretical approach is proposed for the performance simulation of multijunction (MJ) solar cells, starting from the weakness and strength of the Hovel model and of the transfer matrix method for describing the propagation of electromagnetic waves inside the solar cell structure. It is based on the scattering matrix method (SMM) and on a simplified generation function that allow describing with good accuracy the propagation of electromagnetic waves in the solar cell device, preserving, at the same time, the possibility of getting simple analytical solutions of the continuity equations. The numerical stability of the new theoretical approach is first demonstrated on triple junction InGaP/InGaAs/Ge solar cells, in which the Ge substrate is considered as the last layer (layer N) and then as the N‐1 layer. Further, the new theoretical approach is applied to simulate the performance of thin quadruple junction (QJ) InGaP/InGaAs/SiGeSn/Ge solar cells, in two‐ and three‐terminal configurations. Efficiency values of up to 45.1% and 44.9%, respectively, have been simulated at 1000× concentration, by considering the MJ limited by the InGaAs subcell. Finally, it is estimated that the QJ InGaP/InGaAs/SiGeSn/Ge solar cell has the potential to reach efficiencies over 50% by assuming proper antireflective coatings.
中文翻译：
多结太阳能电池性能仿真的新理论方法
从Hovel模型的弱点和强度以及用于描述电磁波在太阳能电池结构内部传播的传递矩阵方法的弱点和强度出发，提出了一种新的理论方法来模拟多结（MJ）太阳能电池的性能。它基于散射矩阵方法（SMM）和简化的生成函数，可以精确描述太阳能电池设备中电磁波的传播，同时保留了获得简单的解析解的可能性。连续性方程。首先在三结InGaP / InGaAs / Ge太阳能电池上证明了新理论方法的数值稳定性，其中将Ge衬底视为最后一层（N层），然后再将其视为N-1层。进一步，新的理论方法被应用于模拟在两端子和三端子配置中的四极薄InGaP / InGaAs / SiGeSn / Ge太阳能电池的性能。通过考虑受InGaAs子电池限制的MJ，在1000x浓度下模拟的效率值分别高达45.1％和44.9％。最后，据估计，通过采用适当的抗反射涂层，QJ InGaP / InGaAs / SiGeSn / Ge太阳能电池有可能达到50％以上的效率。
更新日期：2020-01-07
中文翻译：
多结太阳能电池性能仿真的新理论方法
从Hovel模型的弱点和强度以及用于描述电磁波在太阳能电池结构内部传播的传递矩阵方法的弱点和强度出发，提出了一种新的理论方法来模拟多结（MJ）太阳能电池的性能。它基于散射矩阵方法（SMM）和简化的生成函数，可以精确描述太阳能电池设备中电磁波的传播，同时保留了获得简单的解析解的可能性。连续性方程。首先在三结InGaP / InGaAs / Ge太阳能电池上证明了新理论方法的数值稳定性，其中将Ge衬底视为最后一层（N层），然后再将其视为N-1层。进一步，新的理论方法被应用于模拟在两端子和三端子配置中的四极薄InGaP / InGaAs / SiGeSn / Ge太阳能电池的性能。通过考虑受InGaAs子电池限制的MJ，在1000x浓度下模拟的效率值分别高达45.1％和44.9％。最后，据估计，通过采用适当的抗反射涂层，QJ InGaP / InGaAs / SiGeSn / Ge太阳能电池有可能达到50％以上的效率。
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