Abstract The InGaN pseudo-substrate, namely InGaNOS (InGaN On Sapphire), is used to enhance the In incorporation rate in InyGa1-yN/InxGa1-xN multiple quantum wells (MQWs) to get red emission for micro-display applications. However, the starting material for the InGaNOS fabrication is a non-optimized In0.08Ga0.92N layer grown on GaN on sapphire substrate which exhibits V shaped defects (V pits). Such V pits remain afterwards in the final InGaNOS substrate. We demonstrate here that InxGa1-xN/GaN superlattice has the potential to cover or fill the native V pits while maintaining a pseudomorphic growth. A combination of a thin GaN interlayer and an InGaN layer in a slight tensile strain state for each pair of the superlattice is necessary to achieve this goal. In addition, it is shown that the presence of GaN interlayers improves the material quality and the surface roughness. (0 0 2) X-ray diffraction rocking curve linewidth reduces to 780 arcsec compared to 3000 arcsec for the substrate. Finally, InyGa1-yN/InxGa1-xN multiple quantum wells grown on InxGa1-xN/GaN superlattice buffer layer on InGaNOS 3.205Ȧ substrate shows a central emission wavelength, measured by photoluminescence, of 624 nm at 290 K with an optical internal quantum efficiency value of 6.5%.

中文翻译：

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通过使用 InGaN/GaN 超晶格大大降低了 InGaNOS 衬底上的 V 凹坑密度

摘要 InGaN 伪衬底，即 InGaNOS (InGaN On Sapphire)，用于提高 InyGa1-yN/InxGa1-xN 多量子阱 (MQW) 中的 In 掺入率，以获得微显示应用的红色发射。然而，InGaNOS 制造的起始材料是在蓝宝石衬底上的 GaN 上生长的非优化 In0.08Ga0.92N 层，该层具有 V 形缺陷（V 凹坑）。这样的 V 坑随后保留在最终的 InGaNOS 衬底中。我们在此证明 InxGa1-xN/GaN 超晶格有可能覆盖或填充原生 V 凹坑，同时保持假晶生长。对于每对超晶格，薄的 GaN 中间层和处于轻微拉伸应变状态的 InGaN 层的组合是实现这一目标所必需的。此外，结果表明，GaN 中间层的存在提高了材料质量和表面粗糙度。(0 0 2) X 射线衍射摇摆曲线线宽减少到 780 弧秒，而基板为 3000 弧秒。最后，InyGa1-yN/InxGa1-xN 多量子阱在 InGaNOS 3.205衬底上的 InxGa1-xN/GaN 超晶格缓冲层上显示出中心发射波长，通过光致发光测量，在 290 K 下为 624 nm，具有光学内部量子效率值6.5%。