Abstract Dysprosium Oxide (Dy2O3) gate dielectric layers were deposited by Electron-Beam evaporation onto p-Si (100) wafers. The effects of gamma irradiation on the physical, electrochemical, and electrical properties of Dy2O3/p-Si thin films were investigated in detail. The evolutions on the crystallographic and morphologic characteristics of the films under gamma irradiation were analyzed by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM), respectively; while irradiation effects on the electrochemistry of the films were characterized by X-ray photoelectron spectroscopy (XPS). Furthermore, variations on the electrical characteristics of Dy2O3/p-Si thin films were also specified by Capacitance-Voltage (C–V) and Conductance-Voltage (G/ω-V) measurements. No significant changes on the crystallographic orientation were observed after gamma irradiation exposures. However, the grain size of the films was increased slightly due to the local heating aggregated the smaller grains into a bigger cluster. In addition, the surface roughness was increased after irradiation indicating that deforms the films’ surface morphology. The XPS analysis revealed that electrochemically two different phases exist in the virgin Dy2O3/p-Si thin films. These phases are Dysprosium sub-Oxide (DyxOy) and oxygen deficient in Dy2O3 films. After irradiation exposures, oxygen incorporation, vacancy, and interstitial defects formation were observed in the electrochemical characteristics of the films. On the other hand, the capacitance curves exhibit kinks in the region between depletion and accumulation due to the presence of the intermixing phases of Dy2O3 films. The capacitance of samples significantly increased with the increasing dose, which are correlated with the generated interface state density and/or improvement of dielectric characteristics of Dy2O3 owing to oxygen diffusion.

中文翻译：

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Co-60 伽马辐射对稀土氧化镝 (Dy2O3) 电化学、物理和电气特性的影响

摘要 通过电子束蒸发将氧化镝 (Dy2O3) 栅极介电层沉积到 p-Si (100) 晶片上。详细研究了伽马辐射对 Dy2O3/p-Si 薄膜的物理、电化学和电学性能的影响。分别通过X射线衍射（XRD）和原子力显微镜（AFM）分析了伽马射线照射下薄膜的晶体学和形貌特征的演变；而辐照对薄膜电化学的影响则通过 X 射线光电子能谱 (XPS) 表征。此外，Dy2O3/p-Si 薄膜电特性的变化也可以通过电容-电压 (C-V) 和电导-电压 (G/ω-V) 测量来确定。在伽马辐射暴露后没有观察到晶体取向的显着变化。然而，由于局部加热将较小的颗粒聚集成较大的簇，薄膜的颗粒尺寸略有增加。此外，辐照后表面粗糙度增加，表明薄膜的表面形态发生变形。XPS 分析表明，在原始 Dy2O3/p-Si 薄膜中存在两种不同的电化学相。这些相是镝亚氧化物 (DyxOy) 和 Dy2O3 薄膜中的缺氧相。辐照暴露后，在薄膜的电化学特性中观察到氧掺入、空位和间隙缺陷的形成。另一方面，由于 Dy2O3 薄膜的混合相的存在，电容曲线在耗尽和积累之间的区域表现出扭结。样品的电容随着剂量的增加而显着增加，这与由于氧扩散而产生的界面态密度和/或 Dy2O3 介电特性的改善有关。