Owing to the fast response speed and low energy consumption, photovoltaic vacuum-ultraviolet (VUV) photodetectors show prominent advantages in the field of space science, high-energy physics, and electronics industry. For photovoltaic devices, it is imperative to boost their open-circuit voltage, which is the most direct indicator to measure the photoelectric conversion capability. In this report, a quasi-Fermi level splitting enhanced effect under illumination, benefiting from the variable Fermi level of graphene, is proposed to significantly increase the potential difference up to 2.45 V between the two ends of p-Gr/i-AlN/n-SiC heterojunction photovoltaic device. In addition, the highest external quantum efficiency of 56.1% (under the VUV irradiation of 172 nm) at 0 V bias and the ultra-fast photoresponse of 45 ns further demonstrate the superiority of high-open-circuit-voltage devices. The proposed device design strategy and the adopted effect provide a referential way for the construction of various photovoltaic devices.

由于快速的响应速度和低的能耗，光伏真空紫外（VUV）光电探测器在空间科学，高能物理和电子工业领域显示出显着的优势。对于光伏设备，必须提高其开路电压，这是测量光电转换能力的最直接指标。在本报告中，提出了受益于石墨烯可变费米能级的准费米能级分裂增强效应，可显着提高p-Gr / i-AlN / n两端之间的电势差至2.45 V -SiC异质结光伏器件。此外，最高的外部量子效率为56。在0 V偏压下1％（在172 nm的VUV照射下）和45 ns的超快速光响应进一步证明了高开路电压器件的优越性。提出的器件设计策略和所采用的效果为各种光伏器件的构造提供了参考方法。