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High-Performance Photodetector Based on a Graphene Quantum Dot/CH3NH3PbI3 Perovskite Hybrid
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-01-03 , DOI: 10.1021/acsaelm.9b00705 Alagesan Subramanian 1 , Javed Akram 2 , Sajid Hussain 1 , Jing Chen 1 , Khan Qasim 1, 3 , Wei Zhang 4 , Wei Lei 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-01-03 , DOI: 10.1021/acsaelm.9b00705 Alagesan Subramanian 1 , Javed Akram 2 , Sajid Hussain 1 , Jing Chen 1 , Khan Qasim 1, 3 , Wei Zhang 4 , Wei Lei 1
Affiliation
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Organometallic perovskites have great potential for their utilization in photodetectors. However, the photoresponsivity of the perovskite film is limited by the low light absorption and charge transport capability. The preparation of good quality film with higher light-harvesting capability on the substrate has been a challenging job until now. In this work, we have developed high-quality white fluorescence graphene quantum dots and a CH3NH3PbI3 hybrid film by a one-step solvent-induced fast deposition–crystallization technique for the photodetector applications. Various amounts of graphene quantum dots are added in composites to optimize the device performance, and the hybrid film results in smooth and compactly distributed crystalline grains. The hybrid film device has exhibited 2 times higher photocurrent-to-dark current ratio, three-fold improved responsivity of 12 A W–1, detectivity enhancement up to 6.5 × 1011 Jones, and a faster response speed compared to that of the neat MAPbI3 at −3 V bias voltage. The graphene quantum dot addition induces efficient charge transfer and enhances the photocurrent by more than 2 times compared to the neat film. High light absorption and fast charge transport capability of the film are primarily responsible for the high performance of the photodetector.
中文翻译：
基于石墨烯量子点/ CH 3 NH 3 PbI 3钙钛矿杂化体的高性能光电探测器
有机金属钙钛矿在光电探测器中具有巨大的潜力。然而，钙钛矿膜的光响应性受到低的光吸收和电荷传输能力的限制。迄今为止，在基材上制备具有更高光收集能力的高质量薄膜一直是一项艰巨的工作。在这项工作中，我们开发了高质量的白色荧光石墨烯量子点和CH 3 NH 3 PbI 3一步法溶剂诱导快速沉积-结晶技术制备混合膜，用于光电探测器。在复合材料中添加了各种数量的石墨烯量子点，以优化器件性能，而杂化膜可产生光滑且紧密分布的晶粒。与纯MAPbI相比，该混合膜器件的光电流与暗电流之比高出2倍，响应度提高了12倍AW –1，提高了三倍，检测能力提高了6.5×10 11琼斯，响应速度更快3在-3 V偏置电压下。与纯膜相比，添加石墨烯量子点可诱导有效的电荷转移并将光电流提高2倍以上。薄膜的高光吸收和快速电荷传输能力是光电探测器高性能的主要原因。
更新日期：2020-01-06
中文翻译：
基于石墨烯量子点/ CH 3 NH 3 PbI 3钙钛矿杂化体的高性能光电探测器
有机金属钙钛矿在光电探测器中具有巨大的潜力。然而，钙钛矿膜的光响应性受到低的光吸收和电荷传输能力的限制。迄今为止，在基材上制备具有更高光收集能力的高质量薄膜一直是一项艰巨的工作。在这项工作中，我们开发了高质量的白色荧光石墨烯量子点和CH 3 NH 3 PbI 3一步法溶剂诱导快速沉积-结晶技术制备混合膜，用于光电探测器。在复合材料中添加了各种数量的石墨烯量子点，以优化器件性能，而杂化膜可产生光滑且紧密分布的晶粒。与纯MAPbI相比，该混合膜器件的光电流与暗电流之比高出2倍，响应度提高了12倍AW –1，提高了三倍，检测能力提高了6.5×10 11琼斯，响应速度更快3在-3 V偏置电压下。与纯膜相比，添加石墨烯量子点可诱导有效的电荷转移并将光电流提高2倍以上。薄膜的高光吸收和快速电荷传输能力是光电探测器高性能的主要原因。
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