当前位置：
X-MOL 学术
›
ACS Appl. Electron. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2019-12-24 , DOI: 10.1021/acsaelm.9b00748 Xuejiao Gao 1 , Ilia Kolevatov 2 , Kaixiang Chen 1 , Bin Guan 1 , Abdelmadjid Mesli 3 , Edouard Monakhov 2 , Yaping Dan 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2019-12-24 , DOI: 10.1021/acsaelm.9b00748 Xuejiao Gao 1 , Ilia Kolevatov 2 , Kaixiang Chen 1 , Bin Guan 1 , Abdelmadjid Mesli 3 , Edouard Monakhov 2 , Yaping Dan 1
Affiliation
|
Self-assembled molecular monolayer (SAMM) doping has great potential in state-of-the-art nanoelectronics with unique features of atomically precision and nondestructive doping on complex 3D surfaces. However, it was recently found that carbon impurities introduced by the SAMM significantly reduced the activation rate of phosphorus dopants by forming majority carrier traps. Developing a defect-free SAMM-doping technique with a high activation rate for dopants becomes critical for reliable applications. Considering that susbstitutional boron does not interact with carbon in silicon, herein we employ Hall measurements and secondary ion mass spectrometry (SIMS) to investigate the boron activation rate and then deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) to analyze defects in boron-doped silicon by the SAMM technique. Unlike the phosphorus dopants, the activation rate of boron dopants is close to 100%, which is consistent with the defect measurement results (DLTS and MCTS). Only less than 1% boron dopants bind with oxygen impurities, forming majority hole traps. Interestingly, carbon-related defects in the form of CsH and CsOH act as minority trap states in boron-doped silicon, which will only capture electrons. As a result, the high concentration of carbon impurities has no impact on the activation rate of boron dopants.
中文翻译：
自组装分子单层掺杂硅中硼的完全活化
自组装分子单层（SAMM）掺杂在先进的纳米电子技术中具有巨大的潜力，具有在复杂3D表面上原子精确且无损掺杂的独特功能。然而，最近发现由SAMM引入的碳杂质通过形成多数载流子陷阱而显着降低了磷掺杂剂的活化速率。开发高掺杂率，无缺陷的SAMM掺杂技术对于可靠的应用至关重要。考虑到替代硼不与硅中的碳相互作用，在本文中，我们采用霍尔测量和二次离子质谱（SIMS）来研究硼的活化速率，然后使用深层瞬态光谱（DLTS）和少数载流子瞬态光谱（MCTS）通过SAMM技术分析掺硼硅中的缺陷。与磷掺杂剂不同，硼掺杂剂的活化率接近100％，这与缺陷测量结果（DLTS和MCTS）一致。只有不到1％的硼掺杂剂与氧杂质结合，形成多数空穴陷阱。有趣的是，碳相关的缺陷形式为C小号H和13 C小号OH充当在掺硼的硅少数陷阱态，这将只捕获电子。结果，高浓度的碳杂质对硼掺杂剂的活化速率没有影响。
更新日期：2020-01-06
中文翻译：
自组装分子单层掺杂硅中硼的完全活化
自组装分子单层（SAMM）掺杂在先进的纳米电子技术中具有巨大的潜力，具有在复杂3D表面上原子精确且无损掺杂的独特功能。然而，最近发现由SAMM引入的碳杂质通过形成多数载流子陷阱而显着降低了磷掺杂剂的活化速率。开发高掺杂率，无缺陷的SAMM掺杂技术对于可靠的应用至关重要。考虑到替代硼不与硅中的碳相互作用，在本文中，我们采用霍尔测量和二次离子质谱（SIMS）来研究硼的活化速率，然后使用深层瞬态光谱（DLTS）和少数载流子瞬态光谱（MCTS）通过SAMM技术分析掺硼硅中的缺陷。与磷掺杂剂不同，硼掺杂剂的活化率接近100％，这与缺陷测量结果（DLTS和MCTS）一致。只有不到1％的硼掺杂剂与氧杂质结合，形成多数空穴陷阱。有趣的是，碳相关的缺陷形式为C小号H和13 C小号OH充当在掺硼的硅少数陷阱态，这将只捕获电子。结果，高浓度的碳杂质对硼掺杂剂的活化速率没有影响。
京公网安备 11010802027423号