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In-Plane Strain-Modulated Photoresponsivity of the α-In2Se3-Based Flexible Transistor
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2019-12-20 , DOI: 10.1021/acsaelm.9b00658
Pengfei Hou 1, 2 , Yang Lv 1 , Yun Chen 1, 2 , Yunxia Liu 1, 2 , Chenlu Wang 1, 2 , Pan Zhou 1 , Xiangli Zhong 1 , Jinbin Wang 1 , Xiaoping Ouyang 1
Affiliation  

Two-dimensional (2D) van der Waals (vdW) materials have been proven to be functional materials with excellent performance among flexible functional optoelectronics. Static strain may have a great influence on photoinduced charge carriers in a 2D vdW piezoelectric semiconductor. However, only a few works pay attention to the static-strain-modulated photoresponsivity of 2D vdW ferroelectric materials. α-In2Se3, a 2D vdW ferroelectric semiconductor from the family of III–VI compounds in the form of III2–VI3, has attracted considerable attention for the study of high-performance nanodevices. In this study, we investigate a flexible α-In2Se3-based transistor on a polyethylene terephthalate substrate. A competitive mechanism of carrier mobility and piezoelectric/ferroelectric polarization exists in the transistor when in-plane strain is applied. The carrier mobility modulates separation and transport of electron–hole pairs, whereas piezoelectric/ferroelectric polarization charges modulate the local band profile tilting. The optimized photoresponsivity is increased by 200% (illumination intensity is about 454 μW/cm2) while introducing a −0.15% compressive strain when the wavelength of the laser is about 405 nm. Our results reveal the strain-modulated photoresponsivity in an α-In2Se3-based flexible transistor, which may offer an approach to understand strain-modulated flexible functional optoelectronics.

中文翻译:

面内的α在应变调制光响应23 -Based弹性晶体管

二维(2D)范德华(vdW)材料已被证明是功能性材料,在柔性功能光电器件中具有出色的性能。静态应变可能会对2D vdW压电半导体中的光感应载流子产生很大影响。然而,只有很少的工作关注二维vdW铁电材料的静态应变调制光响应性。α-在23,从家庭III-VI族化合物中的第III形式的2D范德华铁电体半导体2 -VI 3,已经吸引了相当大的注意对于高性能纳米器件的研究。在这项研究中,我们研究了一个灵活的α-在23聚对苯二甲酸乙二酯基板上的硅基晶体管。当施加面内应变时,晶体管中存在载流子迁移率和压电/铁电极化的竞争机制。载流子迁移率调节电子-空穴对的分离和传输,而压电/铁电极化电荷调节局部能带分布的倾斜。当激光器的波长约为405 nm时,引入了-0.15%的压缩应变,优化的光响应性提高了200%(照明强度约为454μW/ cm 2)。我们的研究结果揭示在应变调制的光响应α-在23柔性晶体管,可以提供一种了解应变调制柔性功能光电的方法。
更新日期:2020-01-06
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