A solution-processed high-performance subvolt (<1 V) tin oxide (SnO₂) thin film transistor (TFT) has been fabricated onto an ion-conducting Li–Al₂O₃ gate dielectric by utilizing a high-permittivity Mn₂O₃ gate interface. A comparative device characterization of two different TFTs with and without a Mn₂O₃ gate interface with an ionic dielectric ensures that n-type Mn₂O₃ induces an additional electron to the semiconductor/dielectric interface trap states. Consequently, the TFT with a Mn₂O₃ interface achieves a lower subthreshold swing (SS) by keeping the threshold voltage closer to zero compared to the TFT without the Mn₂O₃ gate interface. This SnO₂ TFT with Mn₂O₃ interface requires only 0.6 V to saturate the drain current, and device performance under such low-voltage (0.6 V) operation exhibits an electron mobility of 17 cm²/V·s with on/off ratio of 3.3 × 10⁴ and subthreshold swing of 124 mV/dec. This work provides a potential approach to achieve a high-performance low-voltage TFT by selecting a suitable combination of dielectric materials.

中文翻译：

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带有Mn ₂ O ₃栅极界面的离子导电电介质制造低压金属氧化物晶体管的栅极界面工程

通过利用高介电常数Mn ₂ O，在离子导电的Li-Al ₂ O ₃栅极电介质上制造了溶液处理的高性能亚伏特（<1 V）氧化锡（SnO ₂）薄膜晶体管（TFT）。₃门接口。具有和不具有带有离子电介质的Mn ₂ O ₃栅极界面的两个不同TFT的比较器件特性可确保n型Mn ₂ O ₃感应出另一个电子至半导体/电介质界面陷阱态。因此，具有Mn ₂ O ₃的TFT与没有Mn ₂ O ₃栅极接口的TFT相比，该接口通过保持阈值电压接近零来实现较低的亚阈值摆幅（SS）。这种具有Mn ₂ O ₃界面的SnO ₂ TFT只需0.6 V即可使漏极电流饱和，在这种低电压（0.6 V）操作下的器件性能表现出17 cm ² / V·s的电子迁移率，具有开/关比3.3×10 ⁴和亚阈值摆幅124 mV / dec。这项工作为通过选择合适的介电材料组合提供了一种实现高性能低压TFT的潜在方法。