Transparent and Conductive Molybdenum-Doped ZnO Thin Films via Chemical Vapor Deposition,ACS Applied Electronic Materials

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Transparent and Conductive Molybdenum-Doped ZnO Thin Films via Chemical Vapor Deposition
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-01-14 , DOI: 10.1021/acsaelm.9b00647
Donglei Zhao ₁ , Sanjayan Sathasivam ₁ , Jianwei Li ₁ , Claire J. Carmalt ₁

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Extrinsically doped ZnO is widely used as a transparent conducting electrode and has the potential to alleviate the demand on the expensive but ubiquitous Sn-doped In₂O₃. Here, we report for the first time the synthesis and characterization of molybdenum-doped ZnO via a chemical vapor deposition route. Films were grown by using diethylzinc, molybdenum hexacarbonyl, toluene, and methanol. All films had visible light transmittance of ∼80% and electrical resistivity of 10^–3 Ω·cm with the lowest resistivity of 2.6 × 10^–3 Ω·cm observed for the 0.57 at. % Mo-doped film. X-ray photoelectron spectroscopy of the surface species and X-ray diffraction based calculations of the ZnO unit cell parameters suggest that Mo is present in the 4+ oxidation state, thus contributing two electrons for electrical conduction for every Zn²⁺ ion replaced in the lattice.

中文翻译：

通过化学气相沉积的透明导电钼掺杂的ZnO薄膜

外在掺杂的ZnO被广泛用作透明导电电极，并且具有减轻对昂贵但普遍存在的Sn掺杂的In ₂ O ₃的需求的潜力。在这里，我们首次通过化学气相沉积途径报道了掺钼的ZnO的合成和表征。通过使用二乙基锌，六羰基钼，甲苯和甲醇来生长膜。所有膜具有〜80％的可见光透射率和10的电阻率^-3 Ω·cm的具有2.6×10的电阻率最低^-3Ω·cm为0.57 at。钼掺杂薄膜。表面物种的X射线光电子能谱和基于ZnO晶胞参数的X射线衍射计算表明，Mo以4+氧化态存在，因此，对于在ZnO中被取代的每个Zn ²⁺离子，都有两个电子用于导电。格子。

更新日期：2020-01-15

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