In this work, thin films of the La1−xSrxCoO3 (0.05 < x < 0.26) compound were grown, employing the so-called spray-pyrolysis process. The as-grown thin films exhibit polycrystalline microstructure, with uniform grain size distribution, and observable porosity. Regarding their electrical transport properties, the produced thin films show semiconducting-like behavior, regardless the Sr doping level, which is most likely due to both the oxygen deficiencies and the grainy nature of the films. Furthermore, room-temperature current–voltage (I–V) measurements reveal stable resistance switching behavior, which is well explained in terms of space-charge limited conduction mechanism. The presented experimental results provide essential evidence regarding the engagement of low-cost, industrial-scale methods of growing perovskite transition metal–oxide thin films, for potential applications in random access memory devices.

中文翻译：

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喷雾热解沉积的 La1−xSrxCoO3 薄膜用于潜在的非易失性存储器应用

在这项工作中，La1-xSrxCoO3 (0.05 < x < 0.26) 化合物的薄膜生长，采用所谓的喷雾热解工艺。生长的薄膜表现出多晶微观结构，具有均匀的晶粒尺寸分布和可观察的孔隙率。关于它们的电传输特性，无论 Sr 掺杂水平如何，所生产的薄膜都表现出类似半导体的行为，这很可能是由于薄膜的缺氧和颗粒性质造成的。此外，室温电流-电压 (I-V) 测量显示稳定的电阻切换行为，这在空间电荷限制传导机制方面得到了很好的解释。所呈现的实验结果提供了关于低成本参与的重要证据，