In this paper, a fully-integrated tunable grounded memristor emulator circuit based on voltage differencing transconductance amplifier (VDTA) has been proposed. The proposed memristor emulator circuit utilizes two VDTA active building blocks, two grounded resistors, a grounded capacitor and a four-quadrant analog multiplier. The working concept along with the detailed derivation of the mathematical model of the circuit has been discussed numerically and analytically to validate the operation of the proposed emulator. The operations of the proposed emulator circuit, as governed by the established model, have been verified by performing simulations in Cadence Virtuoso at 45 nm technology node. Robustness analyses performed, reveal significant process-variation tolerance at deep sub-micron technology node.

本文提出了一种基于电压差跨导放大器（VDTA）的完全集成的可调接地忆阻器仿真器电路。拟议的忆阻器仿真器电路利用两个VDTA有源构建块，两个接地电阻器，一个接地电容器和一个四象限模拟乘法器。已经对工作原理以及电路数学模型的详细推导进行了数值和分析讨论，以验证所提出的仿真器的运行。通过在Cadence Virtuoso的45 nm技术节点上进行仿真，已验证了所建立的模型所控制的拟议仿真器电路的操作。进行的稳健性分析表明，深亚微米技术节点处的工艺变化容限显着。