A modified Dickson’s charge pump circuit with high output voltage and high pumping efficiency fabricated by IHP’s 130 nm SiGe BiCMOS process is proposed. Instead of traditional on-chip metal–insulator–metal capacitor, a modified vertical parallel plate capacitor is utilized as the pumping capacitor, which owns a breakdown voltage higher than 84 V and an improved capacitance density of 1.92 fF/μm². Thus, the output voltage and chip size of charge pump circuit are not limited by the pumping capacitor. To further improve the voltage pumping efficiency and make the circuit suitable for low voltage operation, the threshold voltage and the body effect coefficient is eliminated by using a dynamic control to both the charge transfer switches and the MOSFETs body voltages. Simulated result of a 35-stage charge pump circuit with an output voltage higher than 100 V is demonstrated. A 7-stage charge pump circuit with an output voltage of 13.8 V and a pumping efficiency of 75%, higher than the traditional Dickson’s charge pump circuits, is fabricated and measured.

中文翻译：

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改进的Dickson电荷泵电路，具有高输出电压和高抽运效率

提出了一种由IHP的130 nm SiGe BiCMOS工艺制造的具有高输出电压和高泵浦效率的改进的Dickson电荷泵电路。代替传统的片上金属-绝缘体-金属电容器的，经修饰的垂直平行板电容器被用作泵浦电容器，该公司拥有的击穿电压超过84 V和1.92 FF /μm的改进的电容密度高²。因此，电荷泵电路的输出电压和芯片尺寸不受泵电容器的限制。为了进一步提高电压抽运效率并使该电路适合于低压操作，通过对电荷转移开关和MOSFET的体电压都采用动态控制，消除了阈值电压和体效应系数。演示了输出电压高于100 V的35级电荷泵电路的仿真结果。制作并测量了一种7级电荷泵电路，其输出电压为13.8 V，泵浦效率为75％，高于传统的Dickson电荷泵电路。