Abstract The mechanical properties of mono-crystalline SiC with vacancy defects in fixed abrasive polishing processes are not well known at the nanometric scale. In the molecular dynamic (MD) simulation, the removal mechanism of mono-crystalline SiC substrates with vacancy defects is investigated. So is the wear mechanism of diamond abrasives explored. The simulation result reveals that the increase of vacancy defects in SiC substrates leads to reduced von Mises Stress, however, to increased temperature of SiC substrates during nano-abrading process. More vacancy defects are found to lead higher removal efficiency and less subsurface damage on SiC substrates. Furthermore, the diamond abrasives are worn out through a combination of thermo-chemical wear, graphitization wear and abrasive wear in the simulation.

中文翻译：

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碳化硅空位缺陷对纳米研磨过程去除机制影响的原子尺度研究

摘要 在纳米尺度上，固定磨料抛光工艺中具有空位缺陷的单晶 SiC 的机械性能尚不清楚。在分子动力学（MD）模拟中，研究了具有空位缺陷的单晶 SiC 衬底的去除机制。对金刚石磨料的磨损机制也进行了探索。模拟结果表明，在纳米研磨过程中，SiC 衬底中空位缺陷的增加导致 von Mises 应力降低，但导致 SiC 衬底温度升高。发现更多的空位缺陷导致更高的去除效率和更少的 SiC 衬底上的亚表面损伤。此外，金刚石磨料通过模拟中的热化学磨损、石墨化磨损和磨料磨损的组合而磨损。