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Recent Advances in Compute-in-Memory Support for SRAM Using Monolithic 3-D Integration
IEEE Micro ( IF 2.8 ) Pub Date : 2019-11-01 , DOI: 10.1109/mm.2019.2946489
Zhixiao Zhang 1 , Xin Si 2 , Srivatsa Srinivasa 3 , Akshay Krishna Ramanathan 3 , Meng-Fan Chang 2
Affiliation  

Computing-in-memory (CiM) is a popular design alternative to overcome the von Neumann bottleneck and improve the performance of artificial intelligence computing applications. Monolithic three-dimensional (M3D) technology is a promising solution to extend Moore's law through the development of CiM for data-intensive applications. In this article, we first discuss the motivation and challenges associated with two-dimensional CiM designs, and then examine the possibilities presented by emerging M3D technologies. Finally, we review recent advances and trends in the implementation of CiM using M3D technology.

中文翻译:

使用单片 3-D 集成对 SRAM 进行内存计算支持的最新进展

内存计算 (CiM) 是一种流行的设计替代方案,可克服冯诺依曼瓶颈并提高人工智能计算应用程序的性能。单片三维 (M3D) 技术是一种很有前景的解决方案,可通过为数据密集型应用开发 CiM 来扩展摩尔定律。在本文中,我们首先讨论与二维 CiM 设计相关的动机和挑战,然后研究新兴 M3D 技术带来的可能性。最后,我们回顾了使用 M3D 技术实施 CiM 的最新进展和趋势。
更新日期:2019-11-01
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