This letter presents a fully integrated ${K}$ -band high output 1-dB compression point ( $OP_{1\text {dB}}$ ) power amplifier (PA) fabricated in the 90-nm CMOS process. Common-drain (CD) structure is adopted to achieve high $OP_{1\text {dB}}$ . Since the CD structure suffers from the poor stability and power gain, the proposed neutralization technique for the CD amplifier is used to improve both of them simultaneously. The measured results of the proposed PA demonstrate the saturated output power ( $P_{\text {sat}}$ ) of 22.9 dBm with 24.2% peak power-added efficiency (PAE), $OP_{1\text {dB}}$ of 22.5 dBm with 22.5% PAE. To the best of authors’ knowledge, the proposed CD PA is the first CMOS CD PA above 10 GHz.

中文翻译：

---

采用 90-nm CMOS 技术采用中和技术的 K 波段高 OP1dB 共漏功率放大器

这封信提供了一个完全整合的 ${K}$ -band 高输出 1-dB 压缩点 ( $OP_{1\text {dB}}$ ) 功率放大器 (PA) 采用 90 纳米 CMOS 工艺制造。采用共漏（CD）结构，实现高 $OP_{1\text {dB}}$ . 由于 CD 结构的稳定性和功率增益较差，因此建议使用 CD 放大器的中和技术来同时改善两者。所提出的 PA 的测量结果证明了饱和输出功率（ $P_{\text {sat}}$ ) 为 22.9 dBm，峰值功率附加效率 (PAE) 为 24.2%， $OP_{1\text {dB}}$ 22.5 dBm，PAE 为 22.5%。据作者所知，提议的 CD PA 是第一个 10 GHz 以上的 CMOS CD PA。