In this letter, a mm-wave nMOS-only complementary voltage-controlled oscillator (VCO) is proposed. By replacing the large-sized cross-coupled pMOS pair in the classical complementary VCO structure with smaller and faster nMOS pair employing buffer-reused feedback technique, the parasitic capacitance introduced by the pMOS pair is reduced and the resonant frequency is thus effectively increased. Meanwhile, the negative resistance compensation is enhanced by the feedback reused buffer and the power efficiency is thus improved. The VCO, implemented in 45-nm CMOS SOI technology, occupies an area of 0.038 mm2 including the buffer and is tunable from 67.4 to 71.2 GHz. The optimum phase noise measured at 69.4 GHz is −94.4 dBc/Hz at 1-MHz offset. The VCO and buffer consume 4.5 mW from a 1-V supply.

中文翻译：

---

具有缓冲器重用反馈技术的 67.4-71.2GHz 仅 nMOS 互补 VCO

在这封信中，提出了一种仅毫米波 nMOS 互补压控振荡器 (VCO)。通过采用缓冲器重用反馈技术将经典互补VCO结构中的大尺寸交叉耦合pMOS对替换为更小、更快的nMOS对，减少了pMOS对引入的寄生电容，从而有效提高了谐振频率。同时，反馈复用缓冲器增强了负电阻补偿，从而提高了电源效率。VCO 采用 45 纳米 CMOS SOI 技术实现，包括缓冲器在内的面积为 0.038 平方毫米，可在 67.4 至 71.2 GHz 范围内进行调谐。在 69.4 GHz 下测得的最佳相位噪声为 -94.4 dBc/Hz，偏移量为 1-MHz。VCO 和缓冲器从 1V 电源消耗 4.5mW。