This letter presents an injection-locked frequency octupler (ILFO) fabricated using a 100-nm GaAs pHEMT. A frequency quadrupler, followed by an injection-locked push–push oscillator, is employed to achieve a high multiplication factor of eight with a simple structure. Compared to conventional amplifier-multiplier chains, the proposed structure is advantageous for dc power and chip area consumption, phase noise, and circuit stability. The high multiplication factor allows the use of a low-frequency, high-performance, phase-locked-loop (PLL) as input. The ILFO achieves a locking range from 90.5 to 95.2 with 1-dBm input power. The output power is measured to be −0.4 dBm at 91.2 GHz. The phase-noise degradation from the input source to the output is 19.7 dB at 100-kHz offset.

中文翻译：

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使用推推式输出结构的 W 波段注入锁定频率八倍频器

这封信展示了使用 100 nm GaAs pHEMT 制造的注入锁定频率倍频器 (ILFO)。采用四倍频器和注入锁定推推振荡器，以简单的结构实现八倍的高倍增因子。与传统的放大器-乘法器链相比，所提出的结构有利于直流功率和芯片面积消耗、相位噪声和电路稳定性。高倍增因子允许使用低频、高性能、锁相环 (PLL) 作为输入。ILFO 在 1-dBm 输入功率下实现了 90.5 到 95.2 的锁定范围。在 91.2 GHz 时测量输出功率为 −0.4 dBm。在 100 kHz 偏移下，从输入源到输出的相位噪声劣化为 19.7 dB。