Abstract

An enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) with La₂O₃/SiO₂ gate insulator is investigated for high power application. The La₂O₃/SiO₂ composite oxide formed amorphous La-silicate after post deposition annealing. Good oxide film quality and excellent La-silicate/AlGaN interface properties were achieved as evidenced by the capacitance–voltage (C–V) curves and hysteresis effect of the La-silicate on AlGaN/GaN metal–oxide–semiconductor capacitors. As a result, the E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator shows good threshold voltage (V_th) stability and demonstrated only slightly increase in the dynamic on-resistance (R_on) after high drain bias stress test. The device also exhibits high current density of 752 mA/mm, high maximum transconductance of 210 mS/mm, low subthreshold swing of 104 mV/decade, and I_ON/I_OFF = 10⁷ when tested at V_DS = 10 V. Furthermore, low on-resistance of 7.6 Ω mm, high breakdown voltage of 670 V, and excellent delay time of 4.2 ps were achieved, demonstrating the La-silicate MIS-HEMTs have the potential to be used for power electronic applications.

中文翻译：

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具有硅酸盐栅极绝缘子的E-模式AlGaN / GaN MIS-HEMT的电源应用研究

摘要

针对高功率应用，研究了具有La ₂ O ₃ / SiO ₂栅极绝缘体的增强模式（E模式）AlGaN / GaN金属-绝缘体-半导体高电子迁移率晶体管（MIS-HEMT）。La ₂ O ₃ / SiO ₂复合氧化物在后沉积退火后形成非晶态的La硅酸盐。电容-电压（C - V）曲线和硅酸盐在AlGaN / GaN金属氧化物半导体电容器上的磁滞效应证明了氧化膜质量良好和La-硅酸盐/ AlGaN界面性能优异。结果，具有硅酸盐栅绝缘体的E型AlGaN / GaN MIS-HEMT显示出良好的阈值电压（V_th）稳定性，并且在高漏极偏置应力测试后，动态导通电阻（R _on）仅显示出少量增加。在V _DS  = 10 V进行测试时，该器件还具有752 mA / mm的高电流密度，210 mS / mm的高最大跨导，104 mV / decade的低亚阈值摆幅，以及I _ON / I _OFF  = 10 ⁷。 ，实现了7.6Ωmm的低导通电阻，670 V的高击穿电压和4.2 ps的出色延迟时间，证明了La-Slate MIS-HEMT具有在电力电子应用中使用的潜力。