Applying the coprecipitation technique, we synthesized PVA-capped Ni 0.98 RE 0.02 O (RE = Er md Pr) nanoparticles. Thermogravimetric analysis (TGA) was performed to study the thermal stability of the prepared samples to choose the calcination temperature accordingly. Thermal stability was attained at ~ 823 K with no further thermal decomposition beyond. The crystallinity and phase formation of the prepared samples were confirmed by powder X-ray diffraction XRD. Studying the effect of RE 3+ doping on the structural parameters of NiO nanoparticles was facilitated by X-ray peak profile analysis, based on the Debye Scherer model, Williamson–Hall model and size strain plot. The doped samples exhibited smaller lattice parameter and strain, with the minimum strain along the (200) direction. Also, a smaller crystallite size was found for the doped samples, depending on the dopant’s ionic radius, giving rise to higher dislocation density and specific surface area. Transmission electron microscopy (TEM) proved the nanoscale of the prepared samples, in agreement with the XRD outcomes, and revealed slight agglomeration of homogeneous nanoparticles. DC conductivity indicated the semiconducting behavior of the prepared samples, triggered by Ni 2+ vacancies. Hopping mechanism was found to be the conduction process with two activation energies, depending on the temperature range of study. The dielectric behavior was explained by Maxwell–Wagner interfacial polarization, in agreement with Koop’s theory. The correlated barrier hopping mechanism CBH was found to be the conduction mechanism. Moreover, the Nyquist plot was investigated. Doping by rare earth elements resulted in an increase in dielectric constant, AC and DC conductivities.

中文翻译：

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纯和稀土（Er 和 Pr）掺杂的 NiO 纳米粒子的结构和电学研究

应用共沉淀技术，我们合成了 PVA 封端的 Ni 0.98 RE 0.02 O（RE = Er md Pr）纳米颗粒。进行热重分析（TGA）以研究制备的样品的热稳定性以相应地选择煅烧温度。在~823 K 下达到热稳定性，没有进一步的热分解。制备的样品的结晶度和相形成通过粉末 X 射线衍射 XRD 证实。基于 Debye Scherer 模型、Williamson-Hall 模型和尺寸应变图，通过 X 射线峰轮廓分析有助于研究 RE 3+ 掺杂对 NiO 纳米粒子结构参数的影响。掺杂的样品表现出较小的晶格参数和应变，沿（200）方向的应变最小。此外，发现掺杂样品的微晶尺寸更小，取决于掺杂剂的离子半径，导致更高的位错密度和比表面积。透射电子显微镜 (TEM) 证明了所制备样品的纳米级，与 XRD 结果一致，并揭示了均匀纳米颗粒的轻微聚集。DC 电导率表明制备的样品的半导体行为，由 Ni 2+ 空位触发。发现跳跃机制是具有两种活化能的传导过程，这取决于研究的温度范围。Maxwell-Wagner 界面极化解释了介电行为，这与 Koop 的理论一致。发现相关的屏障跳跃机制 CBH 是传导机制。此外，还研究了奈奎斯特图。稀土元素掺杂导致介电常数增加，