Abstract

In this paper, the microwave characteristics of typical photosensitive material InP under different light irradiation are studied. The measurement sensor is a reflection-type hemispherical quasi-optical resonator with an operating frequency range from 20 to 40 GHz, an operating mode of TEM_00q, and a quality factor of 18,000 or more. For the short-time irradiation experiment, the variation of InP microwave characteristics with the irradiation power of 20 mW, 60 mW, 100 mW, and 200 mW, is studied by frequency-domain and time-domain scanning methods, respectively. The measurement results indicate that the microwave characteristics of InP change significantly even under weak light irradiation. Taking 100 mW and 200 mW irradiation power as examples, the long-time irradiation experiment performed on InP lasting 1.5 min is carried out. The measurement result curves clearly show the influence of the thermal and non-thermal effects on the InP microwave characteristics at the instant of the monochrome light source opening and closing and during irradiation. Furthermore, the temperature distribution of InP during 200 mW irradiation is real-time imaged by a thermal infrared imager to verify the existence of thermal effect during irradiation. The measurement results are in good agreement with the theoretical analysis.

Graphic Abstract

The microwave properties of InP under short-time and long-time irradiation are analyzed by frequency-domain and time-domain scanning methods, especially the effects of thermal and non-thermal on microwave properties during long-term irradiation.

中文翻译：

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基于准谐振腔的典型光敏材料InP在弱光照射下的微波特性分析

摘要

本文研究了典型光敏材料InP在不同光照射下的微波特性。测量传感器是反射型半球准光谐振器，工作频率范围为20至40 GHz，工作模式为TEM _00q，并且品质系数为18,000或更高。对于短时辐照实验，分别通过频域和时域扫描方法研究了InP微波特性随辐照功率20 mW，60 mW，100 mW和200 mW的变化。测量结果表明，即使在弱光照射下，InP的微波特性也会显着变化。以100 mW和200 mW的照射功率为例，对InP进行了持续1.5分钟的长时间照射实验。测量结果曲线清楚地示出了在单色光源打开和关闭时以及在照射期间热和非热效应对InP微波特性的影响。此外，InP的温度分布在200 mW辐照期间由热红外成像仪实时成像，以验证辐照期间是否存在热效应。测量结果与理论分析吻合良好。

图形摘要

通过频域和时域扫描方法分析了InP在短时间和长时间辐射下的微波性能，特别是热和非热对长期辐射过程中微波性能的影响。