In this work, we report the fabrication of CuSbS₂ (CAS) thin films from Sb₂S₃/Cu multilayer developed by using electrodeposition. Sb₂S₃ thin films of approximately 250 nm were deposited by pulse electrodeposition from a bath containing SbCl₃ and Na₂S₂O₃ precursors onto which Cu was electrodeposited. In order to optimize the formation of pure chalcostibite phase of CuSbS₂, the thickness of Cu layer was varied from 55 to 130 nm. The Sb₂S₃/Cu multilayer was heat treated at 250 °C under N₂/S atmosphere for 30 min for its conversion into CuSbS₂ and to enhance the crystallinity. XRD spectra showed orthorhombic phase for all CAS samples. Raman analysis confirmed that the sample with 100 nm of Cu thickness has the highest phase purity. SEM image demonstrated a homogeneous thin film with spherical grains. The chemical states of the elements in the phase pure CuSbS₂ film were obtained from X-ray photoelectron spectroscopy evidencing the oxidation states as Cu⁺Sb³⁺S²⁻. The optical characterization demonstrated a band gap of 1.45 eV. Furthermore, the results showed that the CuSbS₂ thin film is photosensitive and p-type. The energy level band diagram reaffirms its potential as a good absorber layer in thin film solar cells with suitable charge transport pathways.

Graphical abstract

在这项工作中，我们报告了通过电沉积开发的Sb ₂ S ₃ / Cu多层膜制备CuSbS ₂（CAS）薄膜的过程。通过脉冲电沉积从含有SbCl ₃和Na ₂ S ₂ O ₃前体的浴中通过脉冲电沉积沉积约250nm的Sb ₂ S ₃薄膜，在Cu上进行电沉积。为了优化CuSbS ₂的纯黄铜矿相的形成，将Cu层的厚度从55nm改变至130nm。Sb ₂ S ₃ / Cu多层膜在N ₂下于250°C热处理在/ S气氛中放置30分钟，以将其转化为CuSbS ₂并增强结晶度。X射线衍射图谱显示所有CAS样品的正交相。拉曼分析证实，Cu厚度为100 nm的样品具有最高的相纯度。SEM图像显示出具有球形颗粒的均匀薄膜。通过X射线光电子能谱获得证明相态为Cu ⁺ Sb ³⁺ S ^2-的纯CuSbS ₂膜中元素的化学态。光学表征表明带隙为1.45 eV。此外，结果表明CuSbS ₂薄膜是光敏的和p型的。能级能带图重申了其在具有合适电荷传输路径的薄膜太阳能电池中作为良好吸收层的潜力。

图形概要