Abstract

The present work examined the gas evolution on a solid-state sintered silicon carbide material (EKasic®D) at high anodic potentials (up to 120 V vs Ag/AgCl). By using the amperometric detection as well as the method of oxygen quenching, the part of anodic evolved oxygen could be determined for 75–95% of the total amount of consumed charge. The minor part of the total charge is consumed by oxide film formation (passive range) or material dissolution (transpassive range).

中文翻译：

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在ECM条件下对固态烧结碳化硅中阳极氧放出的定量检测

摘要

本工作研究了在高阳极电势下（相对于Ag / AgCl高达120 V）固态烧结碳化硅材料（EKasic®D）上的气体逸出。通过使用安培检测和氧气猝灭方法，可以确定阳极析出的氧气量占总消耗电荷的75–95％。总电荷的一小部分被氧化膜的形成（无源范围）或材料溶解（无源范围）消耗。