This paper reports the seamless fabrication of an Al/MoS₂/SiO₂/Si/Ag structure metal-oxide-semiconductor (MOS) photosensitive capacitor using two-dimensional (2D) MoS₂ films. The ~2 nm MoO₃ thin film is transformed into a 2D MoS₂ film through sulfurization in the vapor phase reaction. The morphological, structural and photophysical properties of the transformed MoS₂ films are investigated using Raman spectroscopy, atomic force microscopy, energy-dispersive X-ray spectroscopy, UV-Vis spectroscopy, and X-ray photoelectron spectroscopy. It is found that the grown MoS₂ films are of good quality and continuous over the entire surface. The fabricated MoS₂ based MOS capacitor is electrically characterized through aluminum and silver contacts. When the MOS capacitor is exposed to light, its capacitance is observed to be increasing with the light intensity. The unbiased capacitance of 477 pF under dark condition is increased to 591 pF when exposed with light ( $\lambda \sim ~600$ nm) of 500 $\mu \text{W}$ /cm².

中文翻译：

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二维MoS2基光敏Al/MoS2/SiO2/Si/Ag MOS电容器

本文报道了使用二维 (2D) MoS ₂薄膜无缝制造 Al/MoS ₂ /SiO ₂ /Si/Ag 结构金属氧化物半导体 (MOS) 光敏电容器。~2 nm MoO ₃薄膜通过气相反应中的硫化转变为2D MoS ₂薄膜。使用拉曼光谱、原子力显微镜、能量色散 X 射线光谱、UV-Vis 光谱和 X 射线光电子光谱研究转化的 MoS ₂薄膜的形态、结构和光物理性质。发现生长的MoS ₂膜质量好并且在整个表面上是连续的。制造的 MoS₂基于 MOS 电容器的电气特性是通过铝和银触点。当 MOS 电容器暴露在光线下时，观察到其电容随着光线强度的增加而增加。黑暗条件下 477 pF 的无偏电容增加到光照时的 591 pF ( $\lambda \sim ~600$ 纳米）500 $\mu \text{W}$ /厘米²。