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Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3†
Materials Horizons ( IF 12.2 ) Pub Date : 2019-09-12 , DOI: 10.1039/c9mh01014a
Jack E. N. Swallow 1, 2, 3, 4 , Benjamin A. D. Williamson 4, 5, 6, 7, 8 , Sanjayan Sathasivam 4, 5, 6, 7 , Max Birkett 1, 2, 3, 4 , Thomas J. Featherstone 1, 2, 3, 4 , Philip A. E. Murgatroyd 1, 2, 3, 4 , Holly J. Edwards 1, 2, 3, 4 , Zachary W. Lebens-Higgins 9, 10, 11, 12, 13 , David A. Duncan 4, 14, 15 , Mark Farnworth 4, 16, 17, 18 , Paul Warren 4, 16, 17, 18 , Nianhua Peng 4, 19, 20, 21 , Tien-Lin Lee 4, 14, 15 , Louis F. J. Piper 9, 10, 11, 12, 13 , Anna Regoutz 4, 5, 6, 7 , Claire J. Carmalt 4, 5, 6, 7 , Ivan P. Parkin 4, 5, 6, 7 , Vin R. Dhanak 1, 2, 3, 4 , David O. Scanlon 4, 5, 6, 7, 8 , Tim D. Veal 1, 2, 3, 4
Affiliation  

Transparent conductors are a vital component of smartphones, touch-enabled displays, low emissivity windows and thin film photovoltaics. Tin-doped In2O3 (ITO) dominates the transparent conductive films market, accounting for the majority of the current multi-billion dollar annual global sales. Due to the high cost of indium, however, alternatives to ITO have been sought but have inferior properties. Here we demonstrate that molybdenum-doped In2O3 (IMO) has higher mobility and therefore higher conductivity than ITO with the same carrier density. This also results in IMO having increased infrared transparency compared to ITO of the same conductivity. These properties enable current performance to be achieved using thinner films, reducing the amount of indium required and raw material costs by half. The enhanced doping behavior arises from Mo 4d donor states being resonant high in the conduction band and negligibly perturbing the host conduction band minimum, in contrast to the adverse perturbation caused by Sn 5s dopant states. This new understanding will enable better and cheaper TCOs based on both In2O3 and other metal oxides.

中文翻译:

高迁移率透明导体的共振掺杂:Mo掺杂In 2 O 3 †的情况

透明导体是智能手机,带触摸功能的显示器,低辐射率窗口和薄膜光伏电池的重要组成部分。锡掺杂的In 2 O 3(ITO)在透明导电膜市场中占主导地位,占当前数十亿美元的全球年度销售额的大部分。然而,由于铟的高成本,已经寻求了ITO的替代品,但是其性能较差。在这里我们证明了钼掺杂的2 O 3(IMO)具有更高的迁移率,因此比具有相同载流子密度的ITO具有更高的电导率。与相同电导率的ITO相比,这也导致IMO具有提高的红外透明度。这些特性使得使用较薄的薄膜可以实现当前的性能,从而将所需的铟量和原材料成本降低了一半。与由Sn 5s掺杂态引起的不利扰动相反,增强的掺杂行为是由于Mo 4d施主态在导带中谐振较高,而对主体导带最小扰动可忽略不计。这种新的认识将使基于In 2 O 3和其他金属氧化物的TCO更好,更便宜。
更新日期:2020-01-04
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