Abstract Two different aromatic diamines monomers (3, 5-diamino-N-(4'-phenyl-4''-triphenylamino)-N-(4''-benzyl-4'''-triphenylamino)benzamide (DPTBTB) and 3, 5-diamino-N-(4'-3'', 4'', 5''-trifluorobiphenyl)-N-(4''-benzyl-3''', 4''', 5'''-trifluorophenyl)benzamide (DTBTB)) containing flexible linkages were designed and synthesized, respectively. Four organo-solubility polyimides (PI-a, PI-b, PI-c, and PI-d) were prepared via a two-step procedure with pyromellitic dianhydride (PMDA) and 3, 3', 4, 4'-biphenyltetracarboxylic dianhydride (BPDA), respectively. The four PIs performed excellent thermal stability with the temperature of 5% weight loss in range of 370–420 ℃ at N2 atmosphere. The Al/PI-a/ITO and Al/PI-b/ITO memory devices exhibited binary write-once-many-read (WORM) and rewritable (Flash) behavior, respectively. But the Al/PI-c/ITO and Al/PI-d/ITO memory devices showed ternary WORM and Flash behavior due to the deeper charge traps came from the fluorinated groups in the structure of PI-c and PI-d, respectively. The memory switching mechanism could be demonstrated through molecular simulation. The results gave an effective strategy that adjusting the structure of PI to achieve different memory effects.

中文翻译：

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含有柔性酰亚胺键和三苯胺或 3,4,5-三氟苯部分的有机可溶性聚酰亚胺的二元/三元记忆行为

摘要 两种不同的芳香族二胺单体 (3, 5-diamino-N-(4'-phenyl-4''-triphenylamino)-N-(4''-benzyl-4'''-triphenylamino)benzamide (DPTBTB) 和 3 , 5-二氨基-N-(4'-3'', 4'', 5''-三氟联苯)-N-(4''-苄基-3''', 4''', 5'''-三氟苯基）苯甲酰胺（DTBTB））分别设计和合成。四种有机溶解性聚酰亚胺（PI-a、PI-b、PI-c 和 PI-d）通过两步法制备，使用均苯四酸二酐 (PMDA) 和 3, 3', 4, 4'-联苯四甲酸二酐(BPDA)，分别。四种PI在N2气氛下在370-420℃范围内表现出优异的热稳定性，失重5%。Al/PI-a/ITO 和 Al/PI-b/ITO 存储设备分别表现出二进制一次写入多次读取 (WORM) 和可重写 (Flash) 行为。但是 Al/PI-c/ITO 和 Al/PI-d/ITO 存储器件表现出三元 WORM 和 Flash 行为，因为更深的电荷陷阱分别来自 PI-c 和 PI-d 结构中的氟化基团。记忆切换机制可以通过分子模拟来证明。结果给出了一种有效的策略，可以通过调整PI的结构来实现不同的记忆效果。记忆切换机制可以通过分子模拟来证明。结果给出了一种有效的策略，可以通过调整PI的结构来实现不同的记忆效果。记忆切换机制可以通过分子模拟来证明。结果给出了一种有效的策略，可以通过调整PI的结构来实现不同的记忆效果。