Neuron shows distinct dependence of electrical activities on membrane patch temperature, and the mode transition of electrical activity is induced by the patch temperature through modulating the opening and closing rates of ion channels. In this paper, inspired by the physical effect of memristor, the potassium and sodium ion channels embedded in the membrane patch are updated by using memristor-based voltage gate variables, and an external stimulus is applied to detect the variety of mode selection in electrical activities under different patch temperatures. It is found that each ion channel can be regarded as a physical memristor, and the shape of pinched hysteresis loop of memristor is dependent on both input voltage and patch temperature. The pinched hysteresis loops of two ion-channel memristors are dramatically enlarged by increasing patch temperature, and the hysteresis lobe areas are monotonously reduced with the increasing of excitation frequency if the frequency of external stimulus exceeds certain threshold. However, for the memristive potassium channel, the AREA1 corresponding to the threshold frequency is increased with the increasing of patch temperature. The amplitude of conductance for two ion-channel memristors depends on the variation of patch temperature. The results of this paper might provide insights to modulate the neural activities in appropriate temperature condition completely, and involvement of external stimulus enhance the effect of patch temperature.

中文翻译：

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温度对忆阻离子通道的影响。

神经元显示出电活动对膜片温度的明显依赖性，而电活动的模式转变是通过调节离子通道的打开和关闭速度由片温度引起的。在本文中，受忆阻器的物理作用的启发，使用基于忆阻器的电压门控变量更新了嵌入在膜片中的钾离子通道和钠离子通道，并应用外部刺激来检测电活动中模式选择的变化在不同的贴片温度下。发现每个离子通道都可以看作是一个物理忆阻器，并且忆阻器的收缩磁滞回线的形状取决于输入电压和贴片温度。通过增加贴片温度，两个离子通道忆阻器的收缩磁滞回线会显着扩大，并且如果外部刺激的频率超过某个阈值，则磁滞波瓣面积会随着激发频率的增加而单调减小。但是，对于忆阻钾通道，随着贴片温度的增加，对应于阈值频率的区域1也增加。两个离子通道忆阻器的电导幅度取决于贴片温度的变化。本文的结果可能会提供洞察力，以在适当的温度条件下完全调节神经活动，而外部刺激的参与会增强斑块温度的影响。