Exploratory studies in the systems A–Al–Sn (A = K and Rb) yielded the clathrates K₈Al_xSn_46–x (potassium aluminium stannide) and Rb₈Al_xSn_46–x (rubidium aluminium stannide), both with the cubic type‐I structure (space group Pmn, No. 223; a ≃ 12.0 Å). The Al:Sn ratio is close to the idealized A₈Al₈Sn₃₈ composition and it is shown that it can be varied slightly, in the range of ca ±1.5, depending on the experimental conditions. Both the (Sn,Al)₂₀ and the (Sn,Al)₂₄ cages in the structure are fully occupied by the guest alkali metal atoms, i.e. K or Rb. The A₈Al₈Sn₃₈ formula has a valence electron count that obeys the valence rules and represents an intrinsic semiconductor, while the experimentally determined compositions A₈Al_8±xSn_38∓x suggest the synthesized materials to be nearly charge‐balanced Zintl phases, i.e. they are likely to behave as heavily doped p‐ or n‐type semiconductors.

中文翻译：

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I型包合物K8AlxSn46-x和Rb8AlxSn46-x的合成和结构表征（x≃6.4-9.7）。

在系统探索性研究甲-Al-Sn系（甲= K和Rb），得到包合物ķ ₈的Al _X的Sn _{46- X}（钾铝锡化物）和Rb ₈的Al _X的Sn _{46- X}（铷铝锡化物），都与立方I型结构（空间群为PM ñ，223号;一个≃12.0埃）。Al：Sn比接近理想化的A ₈ Al ₈ Sn ₃₈组成，并且表明在Ca范围内可以略有变化±1.5，取决于实验条件。结构中的（Sn，Al）₂₀和（Sn，Al）₂₄笼子都被客体碱金属原子（即K或Rb）完全占据。所述阿₈的Al ₈的Sn ₃₈公式具有价电子计数服从化合价规则和表示的本征半导体，而实验确定的组合物阿₈的Al _{8± X}的Sn _{38∓ X}建议将合成的材料中几乎来平衡电荷津特耳相，即它们可能表现为重掺杂的p或n型半导体。