In this study, nonconductor (PZT), semiconductor (Si) and conductor (Pt/Ti) whose permittivity andpermeability are distinctive are prepared into various multilayered structures for exploring the heating behavior of microwave (2.45Hz) in a single-mode cavity. The heating efficiency of the semiconductor and conductor was much higher at the maximum of H field than that of E field. At the H maximum, the Si layer was useful to generate high temperature and the Pt/Ti accelerated the heating rate. At the E maximum, the Si layer was also in favor of obtaining high temperature, but the Pt/Ti layer partially suppressed the microwave heating. The effect of PZT on the heating processing was not obviously observed at the maximum of both H and E fields.

中文翻译：

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单模腔内多层结构的微波加热特性

在这项研究中，将介电常数和磁导率不同的非导体 (PZT)、半导体 (Si) 和导体 (Pt/Ti) 制备成各种多层结构，用于探索微波 (2.45Hz) 在单模腔中的加热行为。半导体和导体在H场最大时的加热效率远高于E场。在 H 最大值时，Si 层有助于产生高温，而 Pt/Ti 加速了加热速率。在 E 最大值时，Si 层也有利于获得高温，但 Pt/Ti 层部分抑制了微波加热。在 H 和 E 场的最大值处没有明显观察到 PZT 对加热加工的影响。