We report highly ordered macroporous silicon (Si)-based photovoltaic characteristics using indium tin oxide (ITO)/n-Si and pn-Si junction-based devices. The detailed fabrication processes including new controlled ITO etching are presented. Theoretical device simulations are performed to understand the presented device structures and propose an optimum device design based on processing limitations. The performance of ITO/n-Si junction devices directly depends on the conformal ITO coating along the pore surface. While pn-Si junction device requires additional doping step, the device can overcome the limitation of ITO conformal coating, especially for a device with high-aspect-ratio macropore structures. Experimental results also support the simulation analysis. The three-dimensional structural properties of well-defined macroporous Si coupled with the formation of photovoltaic devices are attractive for multi-functional applications.

中文翻译：

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使用氧化铟锡-硅和pn-硅结器件比较大孔硅基光伏特性

我们报告了使用氧化铟锡 (ITO)/n-Si 和基于 pn-Si 结的器件的高度有序的大孔硅 (Si) 光伏特性。介绍了详细的制造工艺，包括新的受控 ITO 蚀刻。执行理论器件模拟以了解所呈现的器件结构并基于处理限制提出最佳器件设计。ITO/n-Si 结器件的性能直接取决于沿孔表面的保形 ITO 涂层。虽然 pn-Si 结器件需要额外的掺杂步骤，但该器件可以克服 ITO 保形涂层的限制，特别是对于具有高深宽比大孔结构的器件。实验结果也支持了仿真分析。