Potassium sodium niobate (KNN) has long been considered a viable candidate for replacing lead‐based materials in piezo‐ and ferroelectric devices. The introduction of KNN on an industrial scale is highly awaited; however, processing challenges still remain to be solved. The main obstacle is lack of reproducible growth of uniform boules or thin films at temperatures that facilitate monolithic device integration. Herein, atomic layer deposition (ALD) of KNN thin films, exhibiting high chemical uniformity over large areas, is reported. The cation composition can be controlled at a 1% level, enabling fine‐tuning of the film stoichiometry across the morphotropic phase boundaries of the KNbO₃–NaNbO₃ solid solution. The films are obtained as highly oriented on Pt (111)||Si (100)‐substrates after annealing at temperatures as low as 550 °C. They exhibit converse piezoelectric effects with magnitudes in accordance with literature. It is believed that the successful development of the described ALD process represents a major step toward achieving lead‐free piezo‐ and ferroelectrics on an industrial scale.

中文翻译：

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铁电 K x Na1- x NbO3 薄膜中的化学均匀性。

铌酸钾钠（KNN）长期以来一直被认为是替代压电和铁电器件中铅基材料的可行候选者。KNN的工业规模推广备受期待；然而，加工挑战仍有待解决。主要障碍是在有利于单片器件集成的温度下缺乏均匀晶粒或薄膜的可重复生长。本文报道了 KNN 薄膜的原子层沉积 (ALD)，在大面积上表现出高化学均匀性。_{阳离子组成可以控制在1%的水平，从而能够在KNbO 3} -NaNbO ₃固溶体的同形相边界上微调薄膜的化学计量。在低至 550 °C 的温度下退火后，在 Pt (111)||Si (100) 基底上获得高度取向的薄膜。它们表现出逆压电效应，其大小与文献一致。人们相信，所描述的 ALD 工艺的成功开发代表了朝着工业规模实现无铅压电和铁电体迈出的重要一步。