Metal halide perovskite light-emitting diodes (PeLEDs) are emerging as a promising candidate for next-generation optoelectronic devices. The efficiency of PeLEDs has developed explosively in a short time, but their overall efficiency is still low. This is strongly related to the high refractive indexes of indium-tin-oxide (ITO) and perovskite emitting layers. Various outcoupling strategies are being introduced to outcouple the light trapped inside the layers. However, the proposed methods have experimental challenges that need to be overcome for application to large-area electronics. Based on optical simulations, we demonstrate that the thicknesses of the ITO and perovskite layers are key parameters to improve the outcoupling efficiency of PeLEDs. In addition, the optical energy losses of PeLEDs can be reduced significantly by properly adjusting the thicknesses of the two layers. This leads to outstanding optical performance with a maximum EQE greater than 20% without using any other external outcoupling strategies.

中文翻译：

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氧化铟锡和发射层厚度对钙钛矿发光二极管光输出耦合的影响。

金属卤化物钙钛矿发光二极管（PeLED）正在成为下一代光电器件的有希望的候选者。PeLED的效率在短时间内取得了爆炸性的发展，但其总体效率仍然很低。这与铟锡氧化物（ITO）和钙钛矿发射层的高折射率密切相关。引入了各种外耦合策略，以使层内捕获的光外耦合。但是，提出的方法具有实验挑战，需要将其应用于大面积电子设备。基于光学仿真，我们证明了ITO和钙钛矿层的厚度是提高PeLED的外耦合效率的关键参数。此外，通过适当调整两层的厚度，可以显着降低PeLED的光能损失。这导致出色的光学性能，最大EQE大于20％，而无需使用任何其他外部耦合策略。